丝印：TN1605H8T；Package：TO-220AB；16 A 800 V high temperature SCR thyristor in TO-220AB package

Features • High junction temperature: Tjmax. = 150 °C • VDRM / VRRM = 800 V • VDSM / VRSM = 900 V • Tight IGT spread: 5 to 8 mA • High static immunity dV/dt = 500 V/μs at 150 °C • High turn-on rise dI/dt at 100 A/μs • Halogen-free molding, lead-free plating • ECOPACK2 compliant Applicat

文件：383.73 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

16 A 800 V High Temperature SCR in TO-220AB

Thanks to its operating junction temperature up to 150°C, the TN1605H-8T offers high thermal performance operation up to 16 A rms in a TO-220AB package.\n\n Its trade-off noise immunity (dV/dt = 500 V/μs) versus its gate triggering current (maximum IGT = 8 mA) and its turn-on current rise (dI/dt = 1 • High junction temperature: Tjmax. = 150 °C \n• VDRM / VRRM = 800 V \n• VDSM / VRSM = 900 V \n• Tight IGT spread: 5 to 8 mA \n• High static immunity dV/dt = 500 V/μs at 150 °C \n• High turn-on rise dI/dt at 100 A/μs \n• Halogen-free molding, lead-free plating \n• ECOPACK2 compliant;

ST

意法半导体

16 A 800 V high temperature SCR thyristor in D²PAK package

Features • High junction temperature: Tjmax. = 150 °C • VDRM / VRRM = 800 V • VDSM / VRSM = 900 V • Tight IGT spread: 5 to 8 mA • High static immunity dV/dt = 500 V/μs at 150 °C • High turn-on rise dI/dt at 100 A/μs • Halogen-free molding, lead-free plating • ECOPACK2 compliant Applicat

文件：393.81 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

16 A 800 V high temperature SCR thyristor in D²PAK package

Features • High junction temperature: Tjmax. = 150 °C • VDRM / VRRM = 800 V • VDSM / VRSM = 900 V • Tight IGT spread: 5 to 8 mA • High static immunity dV/dt = 500 V/μs at 150 °C • High turn-on rise dI/dt at 100 A/μs • Halogen-free molding, lead-free plating • ECOPACK2 compliant Applicat

文件：393.81 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

16 A 800 V high temperature SCR thyristor in TO-220AB insulated package

Features • High junction temperature: Tjmax. = 150 °C • VDRM / VRRM = 800 V • VDSM / VRSM = 900 V • Tight IGT spread: 5 to 8 mA • High static immunity dV/dt = 500 V/μs at 150 °C • High turn-on rise dI/dt at 100 A/μs • Halogen-free molding, lead-free plating • Insulated package TO-220AB: –

文件：348.2 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体