TMUX6201RQXR

Marking：H201；Package：WSON；TMUX620x 36 V, Low-RON, 1:1 (SPST), 1-Channel Precision Switch With 1.8-V Logic

1Features •Dualsupplyrange:±4.5Vto±18V •Singlesupplyrange:4.5Vto36V •Lowon-resistance:1.2Ω •Lowchargeinjection:−10pC •–40°Cto+125°Coperatingtemperature •IntegratedPull-Downresistoronlogicpins •1.8Vlogiccompatible •Fail-safelogic •Rail-to-railope

TPC6201

DualN-Channel20V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC

TPC6201

TOSHIBAFieldEffectTransistorSiliconNChannelMOSType(U-MOSII)

TSHA6201

InfraredEmittingDiode

DESCRIPTION TheTSHA620.seriesareinfrared,875nmemittingdiodesinGaAlAstechnology,moldedinaclear,untintedplasticpackage. FEATURES •Packagetype:leaded •Packageform:T-1¾ •Dimensions(inmm):Ø5 •Peakwavelength:λp=875nm •Highreliability •Angleofhalfintensity

TSHA6201

InfraredEmittingDiode,RoHSCompliant,875nm,GaAlAs

TSHA6201

InfraredEmittingDiode,875nm,GaAlAs

TSHA6201

GaAlAsInfraredEmittingDiodesinø5mm(T–13/4)Package

TSHA6201

InfraredEmittingDiode,875nm,GaAlAs

DESCRIPTION TheTSHA620.seriesareinfrared,875nmemittingdiodesin GaAlAstechnology,moldedinaclear,untintedplastic package. FEATURES •Packagetype:leaded •Packageform:T-1¾ •Dimensions(inmm):Ø5 •Peakwavelength:λp=875nm •Highreliability •Angleofhalfinten

TSHA6201

InfraredEmittingDiode,875nm,GaAlAs

TWN6201

SPDTRFSWITCHMODEL