首页 >TMS57002BPHAIC>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
ConductiveHingedBoxwithFoam | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
HFto2000MHzClassABCommonSource-PowerSO-10RF HFto2000MHzClassABCommonSource-PowerSO-10RF VHF/UHFradioanddigitalcellularBTSapplications HFto2000MHzclassABcommonsource-PowerFLAT VHF/UHFradioapplications HFto2000MHzclassABcommoncource-ceramicpackages UHFTVanddigitalcellularBTSapplications 2to | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
RFPOWERTRANSISTORSTheLdmoSTPlasticFAMILY HFto2000MHzClassABCommonSource-PowerSO-10RF VHF/UHFradioanddigitalcellularBTSapplications HFto2000MHzclassABcommonsource-PowerFLAT VHF/UHFradioapplications HFto2000MHzclassABcommoncource-ceramicpackages UHFTVanddigitalcellularBTSapplications 2 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
RFPOWERtransistor,LDMOSTplasticfamilyN-Channelenhancement-modelateralMOSFETs Description ThedeviceisacommonsourceN-channel,enhancement-modelateralfield-effectRFpowertransistordesignedforbroadbandcommercialandindustrialapplicationsatfrequenciesupto1GHz.Thedeviceisdesignedforhighgainandbroadbandperformanceoperatingincommonsourcemodea | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
RFPOWERtransistor,LdmoSTplasticfamilyN-channelenhancement-mode,lateralMOSFETs | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
RFPOWERTRANSISTORSTheLdmoSTPlasticFAMILY HFto2000MHzClassABCommonSource-PowerSO-10RF VHF/UHFradioanddigitalcellularBTSapplications HFto2000MHzclassABcommonsource-PowerFLAT VHF/UHFradioapplications HFto2000MHzclassABcommoncource-ceramicpackages UHFTVanddigitalcellularBTSapplications 2 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
RFPOWERtransistor,LdmoSTplasticfamilyN-channelenhancement-mode,lateralMOSFETs | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
RFPOWERtransistor,LDMOSTplasticfamilyN-Channelenhancement-modelateralMOSFETs Description ThedeviceisacommonsourceN-channel,enhancement-modelateralfield-effectRFpowertransistordesignedforbroadbandcommercialandindustrialapplicationsatfrequenciesupto1GHz.Thedeviceisdesignedforhighgainandbroadbandperformanceoperatingincommonsourcemodea | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS |
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