首页 >TMS5200NL>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-ChannelMOSFET FEATURES ·DrainCurrent-ID=26A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=52mΩ(Max)@VGS=10V APPLICATIONS ·SwitchingVoltageRegulators ·DC-DCconverter | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
MOSFETsSiliconN-channelMOS Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators Features (1)High-speedswitching (2)Smallgatecharge:QSW=8.2nC(typ.) (3)Lowdrain-sourceon-resistance:RDS(ON)=44mΩ(typ.)(VGS=10V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=250V) (5 | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
MOSFETsSiliconN-channelMOS Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators Features (1)High-speedswitching (2)Smallgatecharge:QSW=8.2nC(typ.) (3)Lowdrain-sourceon-resistance:RDS(ON)=44mΩ(typ.)(VGS=10V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=250V) (5 | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
SPDTSwitchforSingle-bandandDual-band,802.11a/b/gSystems GeneralDescription TheTQS5200isahighpower,single-poledouble-throwswitchconfiguredforTX-RXorAntennaDiversityswitchingapplicationsfortheWLANmarket.Thedeviceexhibitsindustry-leadinginsertionloss,isolationandpowerhandling. ProductFeatures •IntegratedSPDTSwitchfor | TriQuint TriQuint Semiconductor | TriQuint | ||
802.11a/b/gSingle/Dual-bandSPDTSwitch | TriQuint TriQuint Semiconductor | TriQuint | ||
802.11a/b/gSingle/Dual-bandSPDTSwitch | TriQuint TriQuint Semiconductor | TriQuint | ||
HighSpeedIREmittingDiodeinø5mm(T–13/4)Package DESCRIPTION TSFF5210isaninfrared,870nmemittingdiodeinGaAlAsdoublehetero(DH)technologywithhighradiantpowerandhighspeed,moldedinaclear,untintedplasticpackage. FEATURES •Packagetype:leaded •Packageform:T-13/4 •Dimensions(inmm):Ø5 •Leadswithstand-off • | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
InfraredEmittingDiode,875nm,GaAlAs DESCRIPTION TheTSHA520.seriesareinfrared,875nmemittingdiodesin GaAlAstechnology,moldedinaclear,untintedplastic package. FEATURES •Packagetype:leaded •Packageform:T-1¾ •Dimensions(inmm):Ø5 •Leadswithstand-off •Peakwavelength:λp=875nm •Highreliabilit | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
InfraredEmittingDiode,875nm,GaAlAs | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
InfraredEmittingDiode Description TheTSHA520.seriesarehighefficiencyinfraredemittingdiodesinGaAlAsonGaAlAstechnology,moldedinaclear,untintedplasticpackage. IncomparisonwiththestandardGaAsonGaAstechnologythesehighintensityemittersfeatureabout70radiantpowerimprovement. Features | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay |
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