首页 >TMS44C256DL>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
256x4BitCMOSDynamicRAMwithFastPageMode 256x4BitCMOSDynamicRAMwithFastPageMode | SamsungSamsung semiconductor 三星三星半导体 | Samsung | ||
256x4BitCMOSDynamicRAMwithFastPageMode 256x4BitCMOSDynamicRAMwithFastPageMode | SamsungSamsung semiconductor 三星三星半导体 | Samsung | ||
256x4BitCMOSDynamicRAMwithFastPageMode 256x4BitCMOSDynamicRAMwithFastPageMode | SamsungSamsung semiconductor 三星三星半导体 | Samsung | ||
256x4BitCMOSDynamicRAMwithFastPageMode 256x4BitCMOSDynamicRAMwithFastPageMode | SamsungSamsung semiconductor 三星三星半导体 | Samsung | ||
256x4BitCMOSDynamicRAMwithFastPageMode 256x4BitCMOSDynamicRAMwithFastPageMode | SamsungSamsung semiconductor 三星三星半导体 | Samsung | ||
4MBR4000SecondaryCacheFastStaticRAMModuleSet FourMCM44256Bmodulescompriseafull4MBofsecondarycachefortheR4000processor.EachmodulecontainsnineMCM6729DWJfaststaticRAMsforacachedatasizeof256Kx36.Thetagportion,dependentonwordlinesize,containseithertwoMCM6729DWJoroneMCM6726DWJfaststaticRAMs.Allinp | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
262144BY4-BITDYNAMICRANDOM-ACCESSMEMORY | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
262.144-WORDBY4-BITDYNAMICRANDOM-ACCESSMEMORIES description TheTMS44C256andTMS44C257seriesare high-speed,1,048,576-bitDynamicRandom- AccessMemoriesorganizedas262,144words offourbitseach.Theyemploystate-of-the-art EPIC™{(EnhancedProcessImplantedCMOS) technologyforhighperformance,reliability,and lowpowerata | TITexas Instruments 德州仪器美国德州仪器公司 | TI |
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