262.144-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORIES

description The TMS44C256 and TMS44C257 series are high-speed, 1,048,576-bit Dynamic Random- Access Memories organized as 262,144 words of four bits each. They employ state-of-the-art EPIC™ {(Enhanced Process Implanted CMOS) technology for high performance, reliability, and low power at a

文件：705.11 Kbytes 页数：32 Pages

TI

德州仪器

256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode

256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode

文件：581.2 Kbytes 页数：15 Pages

Samsung

三星

256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode

256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode

文件：1.48148 Mbytes 页数：15 Pages

Samsung

三星

256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode

256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode

文件：1.24428 Mbytes 页数：15 Pages

Samsung

三星