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29F040

4Mbit512Kbx8,UniformBlockSingleSupplyFlashMemory

DESCRIPTION TheM29F040isanon-volatilememorythatmaybeerasedelectricallyattheblocklevel,andprogrammedByte-by-Byte. ■M29F040isreplacedbytheM29F040B ■5V±10SUPPLYVOLTAGEforPROGRAM, ERASEandREADOPERATIONS ■FASTACCESSTIME:70ns ■BYTEPROGRAMMINGTIME:1

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

29F040

4Megabit(512Kx8-Bit)CMOS5.0Volt-only,UniformSectorFlashMemory

GENERALDESCRIPTION TheAm29F040Bisa4Mbit,5.0volt-onlyFlashmemoryorganizedas524,288Kbytesof8bitseach.The512Kbytesofdataaredividedintoeightsectorsof64Kbyteseachforflexibleerasecapability.The8bitsofdataappearonDQ0–DQ7.TheAm29F040Bisofferedin32-pinPLC

AMDAdvanced Micro Devices

超威半导体美国超威半导体公司

29F040B

4Megabit(512Kx8-Bit)CMOS5.0Volt-only,UniformSectorFlashMemory

AMDAdvanced Micro Devices

超威半导体美国超威半导体公司

AM29F040

4Megabit(524,288x8-Bit)CMOS5.0Volt-only,SectorEraseFlashMemory

GENERALDESCRIPTION TheAm29F040isa4Mbit,5.0Volt-onlyFlashmemoryorganizedas512Kbytesof8bitseach.TheAm29F040isofferedina32-pinpackage.Thisdeviceisdesignedtobeprogrammedin-systemwiththestandardsystem5.0VVCCsupply.A12.0VVPPisnotrequiredforwriteorera

AMDAdvanced Micro Devices

超威半导体美国超威半导体公司

AM29F040B

4Megabit(512Kx8-Bit)CMOS5.0Volt-only,UniformSectorFlashMemory

GENERALDESCRIPTION TheAm29F040Bisa4Mbit,5.0volt-onlyFlashmemoryorganizedas524,288Kbytesof8bitseach.The512Kbytesofdataaredividedintoeightsectorsof64Kbyteseachforflexibleerasecapability.The8bitsofdataappearonDQ0–DQ7.TheAm29F040Bisofferedin32-pinPLC

AMDAdvanced Micro Devices

超威半导体美国超威半导体公司

AM29F040B

4Megabit(512Kx8-Bit)CMOS5.0Volt-only,UniformSectorFlashMemory

AMDAdvanced Micro Devices

超威半导体美国超威半导体公司

AS29F040

Sectorprotection

GENERALDESCRIPTION TheAS29F040isa4Mbit,5.0Volt-onlyFLASHmemoryorganizedas524,288Kbytesof8bitseach.The512Kbytesofdataaredividedintoeightsectorsof64Kbyteseachforflexibleerasecapability.The8bitsofdataappearonDQ0-DQ7.Thedeviceisdesignedtobeprogrammed

MICROSS

Micross Components

AS29F040

512Kx8FLASHUNIFORMSECTOR5.0VFLASHMEMORY

GENERALDESCRIPTION TheAS29F040isa4Mbit,5.0Volt-onlyFLASHmemoryorganizedas524,288Kbytesof8bitseach.The512Kbytesofdataaredividedintoeightsectorsof64Kbyteseachforflexibleerasecapability.The8bitsofdataappearonDQ0-DQ7.Thedeviceisdesignedtobeprogrammed

AUSTIN

Austin Semiconductor

AS29F040

5V512Kx8CMOSFLASHEEPROM

Functionaldescription TheAS29F040isa4-megabit,5-volt-onlyFlashmemorydeviceorganizedas512Kbytesof8bitseach.Forflexibleeraseanprogramcapability,the4megabitsofdataisdividedintoeight64K-bytesectors.The×8dataappearsonDQ0–DQ7.TheAS29F040isofferedinJEDECsta

ALSC

Alliance Semiconductor Corporation

BM29F040

4M(512KX8)BIT

■GENERALDESCRIPTION TheMBM29F040Cisa4M-bit,5.0V-onlyFlashmemoryorganizedas512Kbytesof8bitseach.TheMBM29F040Cisofferedina32-pinPLCCand32-pinTSOP(I)package.Thisdeviceisdesignedtobeprogrammedin-systemwiththestandardsystem5.0VVCCsupply.A12.0VVPPisno

FujitsuFujitsu Component Limited.

富士通富士通株式会社

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