超高灵敏度、超低噪声TMR 线性传感器

TMR2905采用了一个独特的推挽式惠斯通全桥结构设计，包含四个非屏蔽高灵敏度TMR传感器元件。当外加磁场沿平行于传感器敏感方向变化时，惠斯通全桥提供差分电压输出，并且该输出具有良好的温度稳定性。TMR2905性能优越，采用的封装形式：SOP8（6mm x 5mm x 1.5mm）。 （1）隧道磁电阻 (TMR)技术\n（2）超高灵敏度(50~60mV/V/Oe)\n（3）宽动态范围\n（4）低功耗\n（5）优越的温度稳定性\n（6）极低的磁滞\n（7）宽工作电压范围\n（8）极低的本底噪声 (<5nT/rt(Hz) @1Hz);

MDT

多维

Ultra High Sensitivity TMR linear sensor

General Description The TMR2905 linear sensor utilizes a unique push-pull Wheatstone bridge composed of four unshielded TMR sensor elements. The unique bridge design provides a high sensitivity differential output that is linearly proportional to a magnetic field applied parallel to the surface

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MULTIDIMENSION

多维科技

Magnetic Tunnelling Magnetoresistive (TMR) Linear Sensors

AECI

Power Transistors

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Central

Power Transistors

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Central

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

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IRF