Bi stable TMR Bipolar Magnetic Switch with Passive Memory Effect

General Description The TMR1213 is a bi-stable digital bipolar magnetic switch that integrates TMR and CMOS technology in order to provide a magnetically triggered digital switch with high sensitivity, high speed, and ultra-low power consumption. It integrates a push-pull half-bridge TMR magnetic

文件：520.82 Kbytes 页数：6 Pages

MULTIDIMENSION

多维科技

超低功耗双极锁存磁存储开关传感器

TMR1213是一款集成了隧道磁阻（TMR）传感器和CMOS技术，为高灵敏度、高速、低功耗、高精度应用而开发的双极磁开关。与常规的磁开关相比，TMR1213 带有磁存储功能，在掉电情况下依然可以探测磁场极性变化，并存储在磁存储单元中，上电后可以立刻读取最近一次的磁场极性状态。TMR1213采用TMR磁传感器和CMOS集成电路，包括电压发生器、比较器、施密特触发器和CMOS输出电路，能将变化的磁场信号转化为数字电压信号输出。TMR1213通过内部电压稳压器来提供温度补偿电源，并允许宽的工作电压范围。TMR1213以低电压工作、1微安级的供电电流、高响应频率、宽的工作温度范围、优越的抗外磁干扰特性 （1）隧道磁电阻(TMR) 技术\n（2）超低功耗1.5μA\n（3）1kHz高频率响应\n（4）双极锁存型开关\n（5）掉电磁存储\n（6）宽工作电压范围\n（7）卓越的温度稳定性\n（8）优越的抗外磁场性能;

MDT

多维

TRF1213 Near-DC to > 14GHz, 3dB-Bandwidth, Single-Ended-to-Differential RF Amplifier

1 Features • Single-ended input, differential output • Excellent performance driving RF ADCs • Fixed 14dB gain • Bandwidth (3dB): >14GHz • Gain flatness: – +1.2dB (12GHz) – –1dB (14.8GHz) • OP1dB: – 4GHz: 14.4dBm – 10GHz: 14.6dBm • OIP3: – 4GHz: 34dBm – 10GHz: 31dBm • NF: – 4GHz: 8.

文件：1.17389 Mbytes 页数：27 Pages

TI

德州仪器

TRF1213 Near-DC to > 14GHz, 3dB-Bandwidth, Single-Ended-to-Differential RF Amplifier

1 Features • Single-ended input, differential output • Excellent performance driving RF ADCs • Fixed 14dB gain • Bandwidth (3dB): >14GHz • Gain flatness: – +1.2dB (12GHz) – –1dB (14.8GHz) • OP1dB: – 4GHz: 14.4dBm – 10GHz: 14.6dBm • OIP3: – 4GHz: 34dBm – 10GHz: 31dBm • NF: – 4GHz: 8.

文件：1.17389 Mbytes 页数：27 Pages

TI

德州仪器

Aluminum Capacitors 85 C, Miniature, Axial Lead

FEATURES • Low leakage current • Long shelf life • Ideal for application in TV sets, auto radios, radio-phone combinations, electronic testing equipment • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

文件：73.25 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技