IRFB16N60L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=16A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=460mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

IRFB16N60LPBF

PowerMOSFET

IRFB16N60LPBF

PowerMOSFET

IRFB16N60LPBF

SMPSMOSFET

IXFP16N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=16A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=470mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

IXSA16N60

LowVCE(sat)IGBT-ShortCircuitSOACapability

IXSP16N60

LowVCE(sat)IGBT-ShortCircuitSOACapability

IXZR16N60

Z-MOSRFPowerMOSFET

VDSS=600V ID25=18A RDS(on)≤0.56Ω PDC=350 LowCapacitanceZ-MOSTMMOSFETProcess OptimizedforRFOperation IdealforClassC,D,&EApplications Features •IsolatedSubstrate −highisolationvoltage(>2500V) −excellentthermaltransfer −Incre

IXZR16N60A

Z-MOSRFPowerMOSFET

VDSS=600V ID25=18A RDS(on)≤0.56Ω PDC=350 LowCapacitanceZ-MOSTMMOSFETProcess OptimizedforRFOperation IdealforClassC,D,&EApplications Features •IsolatedSubstrate −highisolationvoltage(>2500V) −excellentthermaltransfer −Incre

IXZR16N60B

Z-MOSRFPowerMOSFET

VDSS=600V ID25=18A RDS(on)≤0.56Ω PDC=350 LowCapacitanceZ-MOSTMMOSFETProcess OptimizedforRFOperation IdealforClassC,D,&EApplications Features •IsolatedSubstrate −highisolationvoltage(>2500V) −excellentthermaltransfer −Incre