首页 >TMP4401>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
NPNNPNPlastic-EncapsulateTransistors Features EpitaxialPlanarDieConstruction IdealforLowPowerAmplificationandSwitching | TECHPUBLICTECH PUBLIC Electronics co LTD 台舟电子台舟电子股份有限公司 | TECHPUBLIC | ||
NPNSiliconEpitaxialPlanarTransistor Features HighCollectorCurrent LowCollector-emitterSaturationVoltage | TECHPUBLICTECH PUBLIC Electronics co LTD 台舟电子台舟电子股份有限公司 | TECHPUBLIC | ||
GaAlAsInfraredEmittingDiodesinø3mm(T–1)Package Description TheTSHA44..seriesarehighefficiencyinfraredemittingdiodesinGaAlAsonGaAlAstechnology,moldedinaclear,untintedplasticpackage. IncomparisonwiththestandardGaAsonGaAstechnologythesehighintensityemittersfeatureabout50radiantpowerimprovement. Features ● | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
InfraredEmittingDiode,875nm,GaAlAs DESCRIPTION TheTSHA440.seriesareinfrared,875nmemittingdiodesin GaAlAstechnology,moldedinaclear,untintedplastic package. FEATURES •Packagetype:leaded •Packageform:T-1 •Dimensions(inmm):Ø3 •Peakwavelength:p=875nm •Highreliability •Angleofhalfintens | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
InfraredEmittingDiode,875nm,GaAlAs | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
InfraredEmittingDiode Description TheTSHA44..seriesarehighefficiencyinfraredemittingdiodesinGaAlAsonGaAlAstechnology,moldedinaclear,untintedplasticpackage. IncomparisonwiththestandardGaAsonGaAstechnologythesehighintensityemittersfeatureabout50radiantpowerimprovement. Features ● | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
InfraredEmittingDiode,RoHSCompliant,875nm,GaAlAs | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
FMCarRadioICwithPLL | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
SELECTIONGUIDETOHIGH-VOLTAGE/HIGH-CURRENT | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
4LineESD/EMIProtectionforColorLCDInterfaces | UNIONSEMIUnion Semiconductor, Inc. 英联英联半导体股份有限公司 | UNIONSEMI |
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