首页 >TML017>规格书列表
零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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LowsidePowerSwitchLamp,Solenoid,andMotor-DrivingApplications LowsidePowerSwitchLamp,Solenoid,andMotor-DrivingApplications Features ·N-channelMOSFETbuiltin. ·Overheatprotection. ·Overcurrentprotection.(Selfrecoverytypecurrentlimitingfunction) ·Overvoltageprotection. ·TND017SWincorporatestwosetsofcircuit. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO | ||
LowsidePowerSwitchLamp-,Solenoid-,andMotor-DrivingApplications | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO | ||
LowsidePowerSwitchLamp,Solenoid,andMotor-DrivingApplications LowsidePowerSwitchLamp,Solenoid,andMotor-DrivingApplications Features ·N-channelMOSFETbuiltin. ·Overheatprotection. ·Overcurrentprotection.(Selfrecoverytypecurrentlimitingfunction) ·Overvoltageprotection. ·TND017SWincorporatestwosetsofcircuit. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO | ||
LowsidePowerSwitchLamp,Solenoid,andMotor-DrivingApplications LowsidePowerSwitchLamp,Solenoid,andMotor-DrivingApplications Features ·N-channelMOSFETbuiltin. ·Overheatprotection. ·Overcurrentprotection.(Selfrecoverytypecurrentlimitingfunction) ·Overvoltageprotection. ·TND017SWincorporatestwosetsofcircuit. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO | ||
LowsidePowerSwitchLamp-,Solenoid-,andMotor-DrivingApplications | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO | ||
BipolarTransistorsSiliconNPNEpitaxialType Applications •PowerAmplifiers •PowerSwitching Features (1)HighDCcurrentgain:hFE=180to450(IC=0.5A) (2)Lowcollectorsaturationvoltage:VCE(sat)=0.5V(max)(IC=1A) (3)High-speedswitching:tstg=400ns(typ.)(IC=1A) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
HarmonyXB5,HarmonyXB4,clearplainlensforcircularpilotlight횠22mmwithBA9sbulb | SCHNEIDERSchneider Electric 施耐德施耐德电气 | SCHNEIDER |
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