首页 >TMK-IH1720>规格书列表
零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
CrystalUnitSMD2.0x1.631.875MHz Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage DescriptionandApplications: Surfacemount2.0mmx1.6mmcrystalunitforuseinwirelesscommunicationsdevices, especiallyforan | TAI-SAW TAI-SAW TECHNOLOGY CO., LTD. | TAI-SAW | ||
9000SERIES-MNIATUREMOMENTARYPUSHBUTTONSWTCHES | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
Compact,2-pinmini-moldtypeforhigh-densitymounting.(UMD2) | ROHMRohm 罗姆罗姆半导体集团 | ROHM | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE FEATURES •LowOn-Resistance RDS(on)1=25.0mΩMAX.(VGS=10V,ID=4.0A) RDS(on)2=33.0mΩMAX.(VGS=4.5V,ID=4.0A) RDS(on)3=38.0mΩMAX.(VGS=4.0V,ID=4.0A) •LowCiss:Ciss=800pFTYP. •Built-inG-SProtectionDi | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION TheµPA1720isN-ChannelMOSFieldEffectTransistordesignedforDC/DCConvertersandpowermanagementapplicationofnotebookcomputers. FEATURES •LowOn-Resistance RDS(on)1=25.0mΩMAX.(VGS=10V,ID=4.0A) RDS(on)2=33.0mΩMAX.(VGS=4.5V,ID=4.0A) | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION TheµPA1720isN-ChannelMOSFieldEffectTransistordesignedforDC/DCConvertersandpowermanagementapplicationofnotebookcomputers. FEATURES •LowOn-Resistance RDS(on)1=25.0mΩMAX.(VGS=10V,ID=4.0A) RDS(on)2=33.0mΩMAX.(VGS=4.5V,ID=4.0A) | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE FEATURES •LowOn-Resistance RDS(on)1=25.0mΩMAX.(VGS=10V,ID=4.0A) RDS(on)2=33.0mΩMAX.(VGS=4.5V,ID=4.0A) RDS(on)3=38.0mΩMAX.(VGS=4.0V,ID=4.0A) •LowCiss:Ciss=800pFTYP. •Built-inG-SProtectionDi | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
Lowvoltage,Lowpower,짹1HighdetectaccuracyCMOSVoltageDetector GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein | ANASEMAnaSem Hong Kong Limited. 安纳森半导体安纳森半导体香港有限公司 | ANASEM | ||
Lowvoltage,Lowpower,짹1HighdetectaccuracyCMOSVoltageDetector GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein | ANASEMAnaSem Hong Kong Limited. 安纳森半导体安纳森半导体香港有限公司 | ANASEM | ||
HallEffectBaseLinearCurrentSensor | WinsonWinson Semiconductor Corp. 育升半导体育升半导体股份有限公司 | Winson |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|