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TZ1720A

CrystalUnitSMD2.0x1.631.875MHz

Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage DescriptionandApplications: Surfacemount2.0mmx1.6mmcrystalunitforuseinwirelesscommunicationsdevices, especiallyforan

TAI-SAW

TAI-SAW TECHNOLOGY CO., LTD.

U1720

9000SERIES-MNIATUREMOMENTARYPUSHBUTTONSWTCHES

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UDZSTE-1720B

Compact,2-pinmini-moldtypeforhigh-densitymounting.(UMD2)

ROHMRohm

罗姆罗姆半导体集团

UPA1720

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE FEATURES •LowOn-Resistance RDS(on)1=25.0mΩMAX.(VGS=10V,ID=4.0A) RDS(on)2=33.0mΩMAX.(VGS=4.5V,ID=4.0A) RDS(on)3=38.0mΩMAX.(VGS=4.0V,ID=4.0A) •LowCiss:Ciss=800pFTYP. •Built-inG-SProtectionDi

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

UPA1720

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION TheµPA1720isN-ChannelMOSFieldEffectTransistordesignedforDC/DCConvertersandpowermanagementapplicationofnotebookcomputers. FEATURES •LowOn-Resistance RDS(on)1=25.0mΩMAX.(VGS=10V,ID=4.0A) RDS(on)2=33.0mΩMAX.(VGS=4.5V,ID=4.0A)

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

UPA1720G

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION TheµPA1720isN-ChannelMOSFieldEffectTransistordesignedforDC/DCConvertersandpowermanagementapplicationofnotebookcomputers. FEATURES •LowOn-Resistance RDS(on)1=25.0mΩMAX.(VGS=10V,ID=4.0A) RDS(on)2=33.0mΩMAX.(VGS=4.5V,ID=4.0A)

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

UPA1720G

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE FEATURES •LowOn-Resistance RDS(on)1=25.0mΩMAX.(VGS=10V,ID=4.0A) RDS(on)2=33.0mΩMAX.(VGS=4.5V,ID=4.0A) RDS(on)3=38.0mΩMAX.(VGS=4.0V,ID=4.0A) •LowCiss:Ciss=800pFTYP. •Built-inG-SProtectionDi

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

VDA1720CTA

Lowvoltage,Lowpower,짹1HighdetectaccuracyCMOSVoltageDetector

GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein

ANASEMAnaSem Hong Kong Limited.

安纳森半导体安纳森半导体香港有限公司

VDA1720NTA

Lowvoltage,Lowpower,짹1HighdetectaccuracyCMOSVoltageDetector

GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein

ANASEMAnaSem Hong Kong Limited.

安纳森半导体安纳森半导体香港有限公司

WCS1720

HallEffectBaseLinearCurrentSensor

WinsonWinson Semiconductor Corp.

育升半导体育升半导体股份有限公司

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