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TMBRF30150CT

DualCommon-CathodeUltraLowVFSchottkyRectifier

BWTECH

Bruckewell Technology LTD

V30150C

DualHighVoltageTrenchMOSBarrierSchottkyRectifier

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s, perJESD22-B106(forTO-220AB,ITO-220ABa

VishayVishay Siliconix

威世科技威世科技半导体

V30150C

DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier

VishayVishay Siliconix

威世科技威世科技半导体

V30150C

DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier

VishayVishay Siliconix

威世科技威世科技半导体

V30150C

DualHigh-VoltageTrenchMOSBarrierSchottkyRectifierUltraLowVF=0.56VatIF=5A

UltraLowVF=0.56VatIF=5A   FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,

VishayVishay Siliconix

威世科技威世科技半导体

V30150C

DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier

VishayVishay Siliconix

威世科技威世科技半导体

VB30150C

DualHigh-VoltageTrenchMOSBarrierSchottkyRectifierUltraLowVF=0.56VatIF=5A

UltraLowVF=0.56VatIF=5A   FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,

VishayVishay Siliconix

威世科技威世科技半导体

VB30150C

DualHighVoltageTrenchMOSBarrierSchottkyRectifier

VishayVishay Siliconix

威世科技威世科技半导体

VB30150C

DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier

VishayVishay Siliconix

威世科技威世科技半导体

VB30150C

DualHighVoltageTrenchMOSBarrierSchottkyRectifier

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s, perJESD22-B106(forTO-220AB,ITO-220ABa

VishayVishay Siliconix

威世科技威世科技半导体

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