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CEB140N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,137A,RDS(ON)=7.5mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP140N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,137A,RDS(ON)=7.5mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP140N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,137A,RDS(ON)=7.5mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package. ■Lead-freeplating;RoHScompliant.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEP140N10

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半导体有限公司

CEWP140N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,150A,RDS(ON)=7.8mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-3Ppackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

FIR140N10ANFG

N-ChannelEnhancementModePowerMosfet

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半导体深圳市福斯特半导体有限公司

FIR140N10PG

N-ChannelEnhancementModePowerMosfet

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半导体深圳市福斯特半导体有限公司

FIR140N10RG

N-ChannelEnhancementModePowerMosfet

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半导体深圳市福斯特半导体有限公司

FQA140N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=140A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.01Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQA140N10

100VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQH140N10

100VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQH140N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=140A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.01Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFH140N10P

PolarHVHiPerFETPowerMOSFETs

IXYS

IXYS Integrated Circuits Division

IXFT140N10P

PolarHVHiPerFETPowerMOSFETs

IXYS

IXYS Integrated Circuits Division

IXTQ140N10P

PolarHT??PowerMOSFET

IXYS

IXYS Integrated Circuits Division

IXTQ140N10P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTT140N10P

PolarHT??PowerMOSFET

IXYS

IXYS Integrated Circuits Division

MCP140N10Y

N-ChannelEnhancementModeFieldEffectTransistor

MCCMicro Commercial Components

美微科美微科半导体公司

RU140N10R

N-ChannelAdvancedPowerMOSFET

RUICHIPSShenzhen City Ruichips Semiconductor Co., Ltd

锐骏半导体深圳锐骏半导体股份有限公司

RU140N10R

N-ChannelMOSFETusesadvancedSGTtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半导体有限公司

供应商型号品牌批号封装库存备注价格
无锡紫光微
2112+
TO-263
105000
800个/圆盘一级代理专营品牌!原装正品,优势现货,长
询价
紫光微
22+
TO-263-2L
10000
原厂原装,价格优势!13246658303
询价
无锡紫光微
23+
TO2632
6000
询价
SANKEN
TO-220
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
SANKEN
2017+
原厂封装
25896
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
SANKEN
2016+
5632
只做进口原装正品!现货或者订货一周货期!只要要网上有
询价
23+
N/A
35900
正品授权货源可靠
询价
SANKEN
23+
TO-3P
90000
只做原厂渠道价格优势可提供技术支持
询价
SANKEN
1809+
TO-220
1675
就找我吧!--邀您体验愉快问购元件!
询价
SANKEN
19+
TO-3P
1000
进口原装现货假一赔万力挺实单
询价
更多TMB140N10A供应商 更新时间2024-4-30 15:00:00