首页 >TMA3N55H>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
FastSwitching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HIGHVOLTAGEPOWERMOSFETN-CHANNEL [SEMICONDUCTORTECHNOLOGY,INC.] HIGHVOLTAGEPOWERMOSFETN-CHANNEL CASEOUTLINE:TO-220 | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=3A@TC=25℃ ·DrainSourceVoltage-VDSS=550V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerFieldEffectTransistor PowerFieldEffectTransistor N-ChannelEnhancement-Mode SiliconGateTWOS TheseTMOSPowerFETsaredesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. •SiliconGateforFastSwitchingSpeeds—SwitchingTim | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
PowerFieldEffectTransistor PowerFieldEffectTransistor N-ChannelEnhancement-Mode SiliconGateTWOS TheseTMOSPowerFETsaredesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. •SiliconGateforFastSwitchingSpeeds—SwitchingTim | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
CompositeTransistorWithResistor DESCRIPTION RT3N55MisacompositetransistorbuiltwithtwoRT1N144chipsinSC-88package. FEATURE SiliconNPNepitaxialtype Eachtransistorelementsareindependent. Minipackageforeasymounting APPLICATION Invertedcircuit,switchingcircuit,interfacecircuit,drivercir | ISAHAYAIsahaya Electronics Corporation 谏早电子谏早电子株式会社 | ISAHAYA |
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