TM6659PM

RF AMPLIFIER MODEL

AD6659

DualIFReceiver

GENERALDESCRIPTION TheAD6659isamixed-signal,dual-channelIFreceiversupportingradiotopologiesrequiringtworeceiversignalpaths,suchasinmain/diversityordirectconversion.Thiscommunicationssystemsprocessorconsistsoftwohighperformanceanalog-todigitalconverters(ADCs)and

BX6659

RFAMPLIFIERMODEL

BX6659PM

RFAMPLIFIERMODEL

CEM6659

N-ChanelandP-ChannelMOSFETuseadvancedtrenchtechnology

CEM6659

N-andP-Channel60-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Available •TrenchFET®PowerMOSFET •100RgandUISTested APPLICATIONS •CCFLInverter

CEM6659

DualEnhancementModeFieldEffectTransistor(NandPChannel)

FEATURES ■60V,4.1A,RDS(ON)=68mΩ@VGS=10V. RDS(ON)=86mΩ@VGS=4.5V. ■-60V,-3.1A,RDS(ON)=130mΩ@VGS=-10V. RDS(ON)=170mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapabi

CEM6659

DualEnhancementModeFieldEffectTransistor(NandPChannel)

60V,4.1A,RDS(ON)=68mW@VGS=10V. FEATURES RDS(ON)=86mW@VGS=4.5V. -60V,-3.1A,RDS(ON)=130mW@VGS=-10V. RDS(ON)=170mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CEU6659

DualEnhancementModeFieldEffectTransistor(NandPChannel)

FEATURES 60V,9A,RDS(ON)=72mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RDS(ON)=90mW@VGS=5V. -60V,-6A,RDS(ON)=125mW@VGS=10V. RDS(ON)=150mW@VGS=5V. TO-252-4Lpackage. RoHScompliant.

CK6659

SUBMINIATUREGAS-FILLEDDIODE