首页 >TM6604>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
TransistorSiliconPNPEpitaxialType | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
MOSINTEGRATEDCIRCUIT FEATURES •Programmemory(ROM):1002´10bits •Datamemory(RAM):32´4bits •Built-incarriergenerationcircuitforinfraredremotecontrol •9-bitprogrammabletimer:1channel •Commandexecutiontime:8ms(whenoperatingatfOSC=1MHz:RCoscillation) •Stacklevel:1level | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
4-BITSINGLE-CHIPMICROCONTROLLERFORINFRAREDREMOTECONTROLTRANSMISSION SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
4-BITSINGLE-CHIPMICROCONTROLLERFORINFRAREDREMOTECONTROLTRANSMISSION SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
0.5VLowInput,1AHighSpeedLDORegulatorwithAdjustableCurrentLimit | TOREXTorex Semiconductor 特瑞仕特瑞仕半导体株式会社 | TOREX | ||
MOSFETsSiliconN-channelMOS Applications •Automotive •SwitchingVoltageRegulators •MotorDrivers •DC-DCConverters Features (1)AEC-Q101qualified (2)Lowdrain-sourceon-resistance:RDS(ON)=0.53mΩ(typ.)(VGS=10V) (3)Lowleakagecurrent:IDSS=10μA(max)(VDS=40V) (4)Enhancementmode:Vth=2.0to | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA |
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