TM5325PM

RF AMPLIFIER MODEL

TN5325

N-ChannelEnhancement-ModeVerticalDMOSFETs

AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan

TN5325

N-ChannelEnhancement-ModeVerticalDMOSFET

TN5325

RFAMPLIFIERMODEL

Features ■LowNoiseFigure:2.0dBTypical ■HighOutputPower:+24dBmTypical ■OperatingTemp.-55ºCto+85ºC ■EnvironmentalScreeningAvailable

TN5325

N-ChannelEnhancement-ModeVerticalDMOSFET

GeneralDescription Thislowthreshold,enhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-proven,silicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandthehighinputi

TN5325PM

RFAMPLIFIERMODEL

VBA5325

N-andP-Channel30V(D-S)MOSFET

VBA5325

N-andP-Channel30V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •MotorDrive •MobilePowerBank

VBA5325S

N-andP-Channel30V(D-S)SuperTrenchPowerMOSFET

FEATURES •SuperTrenchtechnologyPowerMOSFET •ExcellentgatechargexRds(on)product(FOM) •Verylowon-resfistanceRds(on) •100RandUISTested APPLICATIONS •MotorDrive •MobilePowerBank

X5325

CPUSupervisorwith32kBitSPIEEPROM