首页 >TM5325C>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
RFAMPLIFIERMODEL | APITECH API Technologies Corp | APITECH | ||
N-ChannelEnhancement-ModeVerticalDMOSFETs AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan | SUTEX Supertex, Inc | SUTEX | ||
N-ChannelEnhancement-ModeVerticalDMOSFET | MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司 | Microchip | ||
RFAMPLIFIERMODEL Features ■LowNoiseFigure:2.0dBTypical ■HighOutputPower:+24dBmTypical ■OperatingTemp.-55ºCto+85ºC ■EnvironmentalScreeningAvailable | APITECH API Technologies Corp | APITECH | ||
N-ChannelEnhancement-ModeVerticalDMOSFET GeneralDescription Thislowthreshold,enhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-proven,silicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandthehighinputi | SUTEX Supertex, Inc | SUTEX | ||
RFAMPLIFIERMODEL | APITECH API Technologies Corp | APITECH | ||
N-andP-Channel30V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-andP-Channel30V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •MotorDrive •MobilePowerBank | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-andP-Channel30V(D-S)SuperTrenchPowerMOSFET FEATURES •SuperTrenchtechnologyPowerMOSFET •ExcellentgatechargexRds(on)product(FOM) •Verylowon-resfistanceRds(on) •100RandUISTested APPLICATIONS •MotorDrive •MobilePowerBank | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
CPUSupervisorwith32kBitSPIEEPROM | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS |
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