TO-251

TO-251BIPOLARTRANSISTORS

TO-251

TRANSISTOR(NPN)

FEATURES Powerdissipation PCM:1W(Tamb=25℃) Collectorcurrent ICM:200mA Collector-basevoltage V(BR)CBO:400V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TO-251

TO-251/TO-252-2Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●Complementarydarlingtonpowertransistors dpakforsurfacemountapplications

TO-251

100V,N-CHANNELSGTMOSFET

DESCRIPTION TheAM12NS10HisavailableinaTO-220,TO-220F, TO-252,TO-251,SOP8,TO-263-2andPDFN8(5x6) FEATURES FastSwitching LowOn-Resistance(RDS(ON)≤12mΩ) LowGateCharge LowReversetransfercapacitances Highavalancheruggedness APPLICATION Synchronousrectifi

TO-251S

Plastic-EncapsulateMOSFETS

TO-251S

Plastic-EncapsulateMOSFETS

TO-251S

Plastic-EncapsulateMOSFETS

TO-251S

Plastic-EncapsulateMOSFETS

TO-251S

Plastic-EncapsulateMOSFETS

TO-251V

SampleInstructionsforChoosingaPackingOption

Description TheSIDACisasiliconbilateralvoltagetriggeredswitch.UponapplicationofavoltageexceedingtheSIDACbreakovervoltagepoint,theSIDACswitchesonthroughanegativeresistanceregiontoalowon-statevoltage.Conductioncontinuesuntilthecurrentisinterruptedordropsbe