TLV936x-Q1 Automotive, 10-MHz, 40-V, Rail-to-Rail Output, Operational Amplifier for Cost-Sensitive Systems

1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C – Human-body model (HBM) Electrostatic discharge (ESD) classification level: 2A – Charged-device model (CDM) ESD classification level: C6 • Low offset voltage: ±400 μV • Low offset voltage dr

文件：2.31108 Mbytes 页数：44 Pages

TI

德州仪器

TLV936x-Q1 Automotive, 10-MHz, 40-V, Rail-to-Rail Output, Operational Amplifier for Cost-Sensitive Systems

1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C – Human-body model (HBM) Electrostatic discharge (ESD) classification level: 2A – Charged-device model (CDM) ESD classification level: C6 • Low offset voltage: ±400 μV • Low offset voltage dr

文件：2.3882 Mbytes 页数：46 Pages

TI

德州仪器

TLV936x-Q1 Automotive, 10-MHz, 40-V, Rail-to-Rail Output, Operational Amplifier for Cost-Sensitive Systems

1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C – Human-body model (HBM) Electrostatic discharge (ESD) classification level: 2A – Charged-device model (CDM) ESD classification level: C6 • Low offset voltage: ±400 μV • Low offset voltage dr

文件：2.12783 Mbytes 页数：41 Pages

TI

德州仪器

TLV936x-Q1 Automotive, 10-MHz, 40-V, Rail-to-Rail Output, Operational Amplifier for Cost-Sensitive Systems

1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C – Human-body model (HBM) Electrostatic discharge (ESD) classification level: 2A – Charged-device model (CDM) ESD classification level: C6 • Low offset voltage: ±400 μV • Low offset voltage dr

文件：2.43576 Mbytes 页数：47 Pages

TI

德州仪器

TLV936x-Q1 Automotive, 10MHz, 40V, Rail-to-Rail Output, Operational Amplifier for Cost-Sensitive Systems

1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C – Human-body model (HBM) Electrostatic discharge (ESD) classification level: 2A – Charged-device model (CDM) ESD classification level: C6 • Low offset voltage: ±400μV • Low offset voltage dri

文件：2.99172 Mbytes 页数：54 Pages

TI

德州仪器