丝印：TLV9164D；Package：SOIC；TLV916x 16-V, 11-MHz, Rail-to-Rail Input/Output, Low Offset Voltage, Low Noise Op Amp

文件：5.12183 Mbytes 页数：67 Pages

TI

德州仪器

双路 10MHz、16V 轨至轨输入/输出、超低噪声、高压摆率运算放大器

The TLV916x family (TLV9161, TLV9162, and TLV9164) is a family of 16-V, general-purpose operational amplifiers. These devices offer exceptional DC precision and AC performance, including rail-to-rail input/output, low offset (±210 µV, typical), low-offset drift (±0.25 µV/°C, typ), and low noise (6.8 • Low offset voltage: ±210 µV\n• Low noise: 6.8 nV/√Hz at 1 kHz, 4.2 nV/√Hz broadband\n• Low bias current: ±10 pA\n• MUX-friendly/comparator inputs \n• Amplifier can be used in open-loop or as comparator\n• Wide bandwidth: 11-MHz GBW, unity-gain stable\n• Low quiescent current: 2.4 mA per amplifier\;

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德州仪器

丝印：T9164PW；Package：TSSOP；TLV916x 16-V, 11-MHz, Rail-to-Rail Input/Output, Low Offset Voltage, Low Noise Op Amp

1 Features • Low offset voltage: ±210 μV • Low offset voltage drift: ±0.25 μV/°C • Low noise: 6.8 nV/√Hz at 1 kHz, 4.2 nV/√Hz broadband • High common-mode rejection: 110 dB • Low bias current: ±10 pA • Rail-to-rail input and output • MUX-friendly/comparator inputs – Amplifier operates wit

文件：4.75281 Mbytes 页数：69 Pages

TI

德州仪器

丝印：T9164PW；Package：TSSOP；TLV916x 16V, 11MHz, Rail-to-Rail Input/Output, Low Offset Voltage, Low Noise Op Amp

1 Features • Low offset voltage: ±210μV • Low offset voltage drift: ±0.25μV/°C • Low noise: 6.8nV/√Hz at 1kHz, 4.2nV/√Hz broadband • High common-mode rejection: 110dB • Low bias current: ±10pA • Rail-to-rail input and output • MUX-friendly/comparator inputs – Amplifier operates with diffe

文件：4.5202 Mbytes 页数：68 Pages

TI

德州仪器

TLV916x-Q1 Automotive 16-V, 11-MHz, Rail-to-Rail Input or Output, Low Offset Voltage, Low Noise Automotive Op Amp

1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Device HBM ESD classification level 3A (≥2500 V) – Device CDM ESD classification level C3 (≥1500 V) • Low offset voltage: ±210 μV • Low offset voltage drift: ±0.25 μV/°C • Low noise: 6

文件：2.65978 Mbytes 页数：51 Pages

TI

德州仪器

TLV916x-Q1 Automotive 16-V, 11-MHz, Rail-to-Rail Input or Output, Low Offset Voltage, Low Noise Automotive Op Amp

1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Device HBM ESD classification level 3A (≥2500 V) – Device CDM ESD classification level C3 (≥1500 V) • Low offset voltage: ±210 μV • Low offset voltage drift: ±0.25 μV/°C • Low noise: 6

文件：2.65978 Mbytes 页数：51 Pages

TI

德州仪器

TLV916x 16V, 11MHz, Rail-to-Rail Input/Output, Low Offset Voltage, Low Noise Op Amp

1 Features • Low offset voltage: ±210μV • Low offset voltage drift: ±0.25μV/°C • Low noise: 6.8nV/√Hz at 1kHz, 4.2nV/√Hz broadband • High common-mode rejection: 110dB • Low bias current: ±10pA • Rail-to-rail input and output • MUX-friendly/comparator inputs – Amplifier operates with diffe

文件：4.5202 Mbytes 页数：68 Pages

TI

德州仪器

TLV916x-Q1 Automotive 16-V, 11-MHz, Rail-to-Rail Input or Output, Low Offset Voltage, Low Noise Automotive Op Amp

1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Device HBM ESD classification level 3A (≥2500 V) – Device CDM ESD classification level C3 (≥1500 V) • Low offset voltage: ±210 μV • Low offset voltage drift: ±0.25 μV/°C • Low noise: 6

文件：2.16825 Mbytes 页数：42 Pages

TI

德州仪器

TLV916x-Q1 Automotive 16-V, 11-MHz, Rail-to-Rail Input or Output, Low Offset Voltage, Low Noise Automotive Op Amp

1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Device HBM ESD classification level 3A (≥2500 V) – Device CDM ESD classification level C3 (≥1500 V) • Low offset voltage: ±210 μV • Low offset voltage drift: ±0.25 μV/°C • Low noise: 6

文件：2.35178 Mbytes 页数：45 Pages

TI

德州仪器

TLV916x-Q1 Automotive 16-V, 11-MHz, Rail-to-Rail Input or Output, Low Offset Voltage, Low Noise Automotive Op Amp

1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Device HBM ESD classification level 3A (≥2500 V) – Device CDM ESD classification level C3 (≥1500 V) • Low offset voltage: ±210 μV • Low offset voltage drift: ±0.25 μV/°C • Low noise: 6

文件：2.61212 Mbytes 页数：50 Pages

TI

德州仪器