首页 >TLV70023DDCT>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
100V,60AEnhancementModeGaNPowerTransistor Features ▪VerylowrDS(ON)5mΩ(typical) ▪Ultralowtotalgatecharge14nC(typical) ▪SEEhardness(seeSEEreportfordetails) •SEL/SEBLETTH(VDS=100V,VGS=0V): 86MeV•cm2/mg(Si) ▪ISL70023SEHradiationacceptingtesting •Highdoserate(50-300rad(Si)/s):100krad(Si) •Lowdoser | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
100V,60AEnhancementModeGaNPowerTransistor Features •VerylowrDS(ON)5mΩ(typical) •Ultralowtotalgatecharge14nC(typical) •SEEhardness(seeSEEreportfordetails) •SEL/SEBLETTH(VDS=100V,VGS=0V): 86MeV•cm2/mg •ISL70023SEHradiationacceptingtesting •Highdoserate(50-300rad(Si)/s):100krad(Si) •Lowdoserate | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
100V,60AEnhancementModeGaNPowerTransistor Features •VerylowrDS(ON)5mΩ(typical) •Ultralowtotalgatecharge14nC(typical) •SEEhardness(seeSEEreportfordetails) •SEL/SEBLETTH(VDS=100V,VGS=0V): 86MeV•cm2/mg •ISL70023SEHradiationacceptingtesting •Highdoserate(50-300rad(Si)/s):100krad(Si) •Lowdoserate | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
100V,60AEnhancementModeGaNPowerTransistor Features ▪VerylowrDS(ON)5mΩ(typical) ▪Ultralowtotalgatecharge14nC(typical) ▪SEEhardness(seeSEEreportfordetails) •SEL/SEBLETTH(VDS=100V,VGS=0V): 86MeV•cm2/mg(Si) ▪ISL70023SEHradiationacceptingtesting •Highdoserate(50-300rad(Si)/s):100krad(Si) •Lowdoser | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
100V,60AEnhancementModeGaNPowerTransistor Features •VerylowrDS(ON)5mΩ(typical) •Ultralowtotalgatecharge14nC(typical) •SEEhardness(seeSEEreportfordetails) •SEL/SEBLETTH(VDS=100V,VGS=0V): 86MeV•cm2/mg •ISL70023SEHradiationacceptingtesting •Highdoserate(50-300rad(Si)/s):100krad(Si) •Lowdoserate | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
100V,60AEnhancementModeGaNPowerTransistor Features •VerylowrDS(ON)5mΩ(typical) •Ultralowtotalgatecharge14nC(typical) •SEEhardness(seeSEEreportfordetails) •SEL/SEBLETTH(VDS=100V,VGS=0V): 86MeV•cm2/mg •ISL70023SEHradiationacceptingtesting •Highdoserate(50-300rad(Si)/s):100krad(Si) •Lowdoserate | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
100V,60AEnhancementModeGaNPowerTransistor Features ▪VerylowrDS(ON)5mΩ(typical) ▪Ultralowtotalgatecharge14nC(typical) ▪SEEhardness(seeSEEreportfordetails) •SEL/SEBLETTH(VDS=100V,VGS=0V): 86MeV•cm2/mg(Si) ▪ISL70023SEHradiationacceptingtesting •Highdoserate(50-300rad(Si)/s):100krad(Si) •Lowdoser | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
100V,60AEnhancementModeGaNPowerTransistor Features ▪VerylowrDS(ON)5mΩ(typical) ▪Ultralowtotalgatecharge14nC(typical) ▪SEEhardness(seeSEEreportfordetails) •SEL/SEBLETTH(VDS=100V,VGS=0V): 86MeV•cm2/mg(Si) ▪ISL70023SEHradiationacceptingtesting •Highdoserate(50-300rad(Si)/s):100krad(Si) •Lowdoser | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
100V,60AEnhancementModeGaNPowerTransistor Features •VerylowrDS(ON)5mΩ(typical) •Ultralowtotalgatecharge14nC(typical) •SEEhardness(seeSEEreportfordetails) •SEL/SEBLETTH(VDS=100V,VGS=0V): 86MeV•cm2/mg •ISL70023SEHradiationacceptingtesting •Highdoserate(50-300rad(Si)/s):100krad(Si) •Lowdoserate | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
100V,60AEnhancementModeGaNPowerTransistor Features •VerylowrDS(ON)5mΩ(typical) •Ultralowtotalgatecharge14nC(typical) •SEEhardness(seeSEEreportfordetails) •SEL/SEBLETTH(VDS=100V,VGS=0V): 86MeV•cm2/mg •ISL70023SEHradiationacceptingtesting •Highdoserate(50-300rad(Si)/s):100krad(Si) •Lowdoserate | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|
