FAMILY OF 1.8 V MICROPOWER RAIL-TO-RAIL INPUT/OUTPUT OPERATIONAL AMPLIFIERS WITH SHUT DOWN

文件：470.85 Kbytes 页数：27 Pages

TI

德州仪器

MOS FIELD EFFECT TRANSISTOR

Description The μ PA2763 is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications. Features • Low on-state resistance ⎯ RDS(on)1 = 23.0 mΩ MAX. (VGS = 10 V, ID = 21 A) ⎯ RDS(on)2 = 28.0 mΩ MAX. (VGS = 8 V, ID = 21 A) • Low Ciss 2100 pF TYP

文件：245.25 Kbytes 页数：8 Pages

RENESAS

瑞萨

3 V, 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS

DESCRIPTION The µPC8182TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC operates at 3 V. The medium output power is suitable for RF-TX of mobile communications system. FEATURES • Supply voltage: VCC = 2.7 to 3.3 V • Circuit current: ICC = 3

文件：404.53 Kbytes 页数：16 Pages

NEC

瑞萨

3 V, WIDEBAND MEDIUM POWER SI MMIC AMPLIFIER

DESCRIPTION The UPC2762T and UPC2763T are Silicon Monolithic integrated circuits which are manufactured using the NESAT III process. The NESAT III process produces transistors with fT approaching 20 GHz. These amplifiers were designed for 900 MHz and 1.9 GHz receivers in cellular, cordless teleph

文件：144.32 Kbytes 页数：6 Pages

NEC

瑞萨