PHOTOINTERRUPTER INFRARED PHOTODARLINGTONTRANSISTOR

文件：424.5 Kbytes 页数：8 Pages

TOSHIBA

东芝

NPN SILICON SiGe RF TWIN TRANSISTOR

NPN SILICON + SiGe RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PKG) FEATURES • 2 different built-in transistors (2SC5435, NESG2107M33) Q1: High gain transistor fT = 12.0 GHz TYP., S21e2 = 11 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Q2: Built-in l

文件：213.31 Kbytes 页数：8 Pages

RENESAS

瑞萨

NPN SILICON SiGe RF TWIN TRANSISTOR

NPN SILICON + SiGe RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PKG) FEATURES • 2 different built-in transistors (2SC5435, NESG2107M33) Q1: High gain transistor fT = 12.0 GHz TYP., S21e2 = 11 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Q2: Built-in l

文件：213.31 Kbytes 页数：8 Pages

RENESAS

瑞萨

EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION FEATURES • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process.

文件：69.4 Kbytes 页数：6 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION FEATURES ● With Built-in Bias Resistors. ● Simplify Circuit Design. ● Reduce a Quantity of Parts and Manufacturing Process.

文件：69.67 Kbytes 页数：6 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

3.3V/5V or Adjustable-Output, Single-Cell DC-DC Converters

General Description The MAX866 and MAX867 are ultra-small, high-efficiency, CMOS, step-up, DC-DC switching regulators for 1-cell battery-powered systems. The MAX866 accepts a positive input voltage between 0.8V and VOUT and converts it to a higher, pin-selectable output voltage of 3.3V or 5V. The

文件：139.75 Kbytes 页数：12 Pages

MAXIM

美信