TLP705F中文资料东芝数据手册PDF规格书

Plasma Display Panel

Industrial Inverter

IGBT/Power MOSFET Gate Drive

TLP705F consists of a GaAℓAs light emitting diode and an integrated photodetector.

This unit is 6-lead SDIP package. TLP705F is 50 smaller than 8PIN DIP and has suited the safety standard reinforced insulation class. So, mounting area in safety standard required equipment can be reduced.

TLP705F is suitable for gate driving circuit of IGBT or power MOS FET.

Especially TLP705F is capable of “direct” gate drive of lower Power IGBTs.

Absolute Maximum ratings and electrical characteristics are the same as The TLP705 technical data sheets.

• Peak output current : ±0.45 A (max)

• Operating frequency : 250 kHz (max)

• Guaranteed performance over temperature: −40 to 100°C

• Supply current : 3mA (max)

• Power supply voltage : 10 to 20 V

• Threshold input current : IFLH = 8 mA (max)

• Switching time (tpLH / tpHL) : 200 ns (max)

• Common mode transient immunity : ±10 kV/μs (min)

• Isolation voltage : 5000 Vrms (min)

• UL Recognized : UL1577, File No.E67349

• Construction Mechanical Rating

Creepage Distance 8.0 mm (min)

Clearance 8.0 mm (min)

Insulation Thickness 0.4 mm (min)

• Option (D4)

TÜV approved : EN60747-5-2 Certificate No. R50033433

Maximum operating insulation voltage: 1140 Vpk

Highest permissible over voltage : 8000 Vpk