The Toshiba TLP595G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET

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TOSHIBA

东芝

The Toshiba TLP595G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET

Toshiba

东芝

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The TPV595 is Designed for Class AB Push Pull, Common Emitter from 470 to 860 MHz Applications. FEATURES: • Gold Metalization • Emitter Ballast Resistors • Internal Input Matching

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ASI

UHF Linear Power Transistor

The RF Line UHF Linear Power Transistor ... designed for driver and output stages in band IV and V TV transposes and transmitter amplifiers. The TPV595A uses gold metallized die with diffused emitter ballast resistors to enhance reliability, ruggedness and linearity. • Band IVand V (470-

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The TPV595A is Designed for Class AB Push Pull, Common Emitter from 470 to 860 MHz Applications. FEATURES: • Gold Metalization • Emitter Ballast Resistors • Internal Input Matching

文件：15.68 Kbytes 页数：1 Pages

ASI