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CA3100E

38MHz,OperationalAmplifier

Description TheCA3100isalargesignalwideband,highspeedoperationalamplifierwhichhasaunitygaincrossover frequency(fT)ofapproximately38MHzandanopenloop,3dBcornerfrequencyofapproximately110kHz. Features HighOpenLoopGainatVideo Frequencies......

HARRIS

HARRIS corporation

CA3100M

38MHz,OperationalAmplifier

Description TheCA3100isalargesignalwideband,highspeedoperationalamplifierwhichhasaunitygaincrossover frequency(fT)ofapproximately38MHzandanopenloop,3dBcornerfrequencyofapproximately110kHz. Features HighOpenLoopGainatVideo Frequencies......

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

CA3100M

38MHz,OperationalAmplifier

Description TheCA3100isalargesignalwideband,highspeedoperationalamplifierwhichhasaunitygaincrossover frequency(fT)ofapproximately38MHzandanopenloop,3dBcornerfrequencyofapproximately110kHz. Features HighOpenLoopGainatVideo Frequencies......

HARRIS

HARRIS corporation

CA3100T

38MHz,OperationalAmplifier

Description TheCA3100isalargesignalwideband,highspeedoperationalamplifierwhichhasaunitygaincrossover frequency(fT)ofapproximately38MHzandanopenloop,3dBcornerfrequencyofapproximately110kHz. Features HighOpenLoopGainatVideo Frequencies......

HARRIS

HARRIS corporation

CA3100T

38MHz,OperationalAmplifier

Description TheCA3100isalargesignalwideband,highspeedoperationalamplifierwhichhasaunitygaincrossover frequency(fT)ofapproximately38MHzandanopenloop,3dBcornerfrequencyofapproximately110kHz. Features HighOpenLoopGainatVideo Frequencies......

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

CAR3100A

ITTCannonistheforemostmanufac-turerofMSandMStypeconnectorswiththewidestrangeofconnectorstyles

ITTITT Industries

ITT工业

CBB3100BKAHWS

ThinFilmBinaryMOSCapacitors

FEATURES •Wirebondable •Uservalueselection •Fivecapacitorsona0.019x0.048(CBB) or0.044x0.044(CBC)chip •Casesize:0402,0404 •Capacitancerange:upto93pFinbinary increments •Dielectric:silicondioxide •Lowdielectricloss •Substrate:siliconwithgoldbacking

VishayVishay Siliconix

威世科技

CBB3100BKAKWS

ThinFilmBinaryMOSCapacitors

FEATURES •Wirebondable •Uservalueselection •Fivecapacitorsona0.019x0.048(CBB) or0.044x0.044(CBC)chip •Casesize:0402,0404 •Capacitancerange:upto93pFinbinary increments •Dielectric:silicondioxide •Lowdielectricloss •Substrate:siliconwithgoldbacking

VishayVishay Siliconix

威世科技

CBB3100BKGHWS

ThinFilmBinaryMOSCapacitors

FEATURES •Wirebondable •Uservalueselection •Fivecapacitorsona0.019x0.048(CBB) or0.044x0.044(CBC)chip •Casesize:0402,0404 •Capacitancerange:upto93pFinbinary increments •Dielectric:silicondioxide •Lowdielectricloss •Substrate:siliconwithgoldbacking

VishayVishay Siliconix

威世科技

CBB3100BKGKWS

ThinFilmBinaryMOSCapacitors

FEATURES •Wirebondable •Uservalueselection •Fivecapacitorsona0.019x0.048(CBB) or0.044x0.044(CBC)chip •Casesize:0402,0404 •Capacitancerange:upto93pFinbinary increments •Dielectric:silicondioxide •Lowdielectricloss •Substrate:siliconwithgoldbacking

VishayVishay Siliconix

威世科技

CBB3100BLAHWS

ThinFilmBinaryMOSCapacitors

FEATURES •Wirebondable •Uservalueselection •Fivecapacitorsona0.019x0.048(CBB) or0.044x0.044(CBC)chip •Casesize:0402,0404 •Capacitancerange:upto93pFinbinary increments •Dielectric:silicondioxide •Lowdielectricloss •Substrate:siliconwithgoldbacking

VishayVishay Siliconix

威世科技

CBB3100BLAKWS

ThinFilmBinaryMOSCapacitors

FEATURES •Wirebondable •Uservalueselection •Fivecapacitorsona0.019x0.048(CBB) or0.044x0.044(CBC)chip •Casesize:0402,0404 •Capacitancerange:upto93pFinbinary increments •Dielectric:silicondioxide •Lowdielectricloss •Substrate:siliconwithgoldbacking

VishayVishay Siliconix

威世科技

CBB3100BLGHWS

ThinFilmBinaryMOSCapacitors

FEATURES •Wirebondable •Uservalueselection •Fivecapacitorsona0.019x0.048(CBB) or0.044x0.044(CBC)chip •Casesize:0402,0404 •Capacitancerange:upto93pFinbinary increments •Dielectric:silicondioxide •Lowdielectricloss •Substrate:siliconwithgoldbacking

VishayVishay Siliconix

威世科技

CBB3100BLGKWS

ThinFilmBinaryMOSCapacitors

FEATURES •Wirebondable •Uservalueselection •Fivecapacitorsona0.019x0.048(CBB) or0.044x0.044(CBC)chip •Casesize:0402,0404 •Capacitancerange:upto93pFinbinary increments •Dielectric:silicondioxide •Lowdielectricloss •Substrate:siliconwithgoldbacking

VishayVishay Siliconix

威世科技

CBB3100BMAHWS

ThinFilmBinaryMOSCapacitors

FEATURES •Wirebondable •Uservalueselection •Fivecapacitorsona0.019x0.048(CBB) or0.044x0.044(CBC)chip •Casesize:0402,0404 •Capacitancerange:upto93pFinbinary increments •Dielectric:silicondioxide •Lowdielectricloss •Substrate:siliconwithgoldbacking

VishayVishay Siliconix

威世科技

CBB3100BMAKWS

ThinFilmBinaryMOSCapacitors

FEATURES •Wirebondable •Uservalueselection •Fivecapacitorsona0.019x0.048(CBB) or0.044x0.044(CBC)chip •Casesize:0402,0404 •Capacitancerange:upto93pFinbinary increments •Dielectric:silicondioxide •Lowdielectricloss •Substrate:siliconwithgoldbacking

VishayVishay Siliconix

威世科技

CBB3100BMGHWS

ThinFilmBinaryMOSCapacitors

FEATURES •Wirebondable •Uservalueselection •Fivecapacitorsona0.019x0.048(CBB) or0.044x0.044(CBC)chip •Casesize:0402,0404 •Capacitancerange:upto93pFinbinary increments •Dielectric:silicondioxide •Lowdielectricloss •Substrate:siliconwithgoldbacking

VishayVishay Siliconix

威世科技

CBB3100BMGKWS

ThinFilmBinaryMOSCapacitors

FEATURES •Wirebondable •Uservalueselection •Fivecapacitorsona0.019x0.048(CBB) or0.044x0.044(CBC)chip •Casesize:0402,0404 •Capacitancerange:upto93pFinbinary increments •Dielectric:silicondioxide •Lowdielectricloss •Substrate:siliconwithgoldbacking

VishayVishay Siliconix

威世科技

CBB3100CKAHWS

ThinFilmBinaryMOSCapacitors

FEATURES •Wirebondable •Uservalueselection •Fivecapacitorsona0.019x0.048(CBB) or0.044x0.044(CBC)chip •Casesize:0402,0404 •Capacitancerange:upto93pFinbinary increments •Dielectric:silicondioxide •Lowdielectricloss •Substrate:siliconwithgoldbacking

VishayVishay Siliconix

威世科技

CBB3100CKAKWS

ThinFilmBinaryMOSCapacitors

FEATURES •Wirebondable •Uservalueselection •Fivecapacitorsona0.019x0.048(CBB) or0.044x0.044(CBC)chip •Casesize:0402,0404 •Capacitancerange:upto93pFinbinary increments •Dielectric:silicondioxide •Lowdielectricloss •Substrate:siliconwithgoldbacking

VishayVishay Siliconix

威世科技

产品属性

  • 产品编号:

    TLP3100(TP,F)

  • 制造商:

    Toshiba Semiconductor and Storage

  • 类别:

    继电器 > 固态继电器

  • 系列:

    TLP3100

  • 包装:

    散装

  • 安装类型:

    表面贴装型

  • 电路:

    SPST-NO(1 Form A)

  • 输出类型:

    AC,DC

  • 电压 - 输入:

    1.33VDC

  • 端接样式:

    鸥翼

  • 封装/外壳:

    6-SMD,鸥翼

  • 供应商器件封装:

    6-SOP(2.54mm)

  • 描述:

    SSR RELAY SPST-NO 2.5A 0-20V

供应商型号品牌批号封装库存备注价格
TOSHIBA/东芝
23+
6-SOP
90000
只做原装 全系列供应 价格优势 可开增票
询价
TOSHIBA/东芝
12+
DIPSOP
6981
原装现货
询价
TOSHIBA/东芝
2023+
SMD
1130
一级代理优势现货,全新正品直营店
询价
TOSHIBA
2022+
原厂原包装
8600
全新原装 支持表配单 中国著名电子元器件独立分销
询价
TOSHIBA/东芝
22+
12800
本公司只做进口原装!优势低价出售!
询价
TOSHIBA
20+
6-SOP
3796
就找我吧!--邀您体验愉快问购元件!
询价
TOSHIBA/东芝
21+
SOP
50000
终端可免费提供样品,欢迎咨询
询价
23+
N/A
49400
正品授权货源可靠
询价
TOSHIBA
11+
SOP
8000
全新原装,绝对正品现货供应
询价
TOSHIBA
1844+
SOP
9852
只做原装正品假一赔十为客户做到零风险!!
询价
更多TLP3100(TP,F)供应商 更新时间2024-5-21 17:18:00