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TLP2745E

GaA?밃sInfraredLED&PhotoIC

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TLP2745TP

GaA?밃sInfraredLED&PhotoIC

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TLP2745TPE

GaA?밃sInfraredLED&PhotoIC

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

U2745B

UHFASKTRANSMITTER

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

U2745B-MFB

UHFASKTRANSMITTER

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

UPC2745

3V,SUPERMINIMOLDSILICONMMICWIDEBANDAMPLIFIERFORMOBILECOMMUNICATIONS

DESCRIPTION TheUPC2745TBandUPC2746TBareSiliconMMICWidebandAmplifiersmanufacturedusingNECs20GHzfTNESATTMIIIsiliconbipolarprocess.ThesedevicesaredesignedforuseasbufferampsinmobilecommunicationapplicationssuchasCellular,PCS,andCordlesshandsets,andWLANtransce

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

UPC2745T

3V,2.7GHzSiMMICWIDEBANDAMPLIFIER

DESCRIPTION TheUPC2745TisaSiliconMonolithicintegratedcircuitwhichismanufacturedusingtheNESATIIIprocess.TheNESATIIIprocessproducestransistorswithfTapproaching20GHz. Thisdeviceissuitableasabufferamplifierforcellularandcordlesstelephoneapplications.Operating

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

UPC2745T

BIPOLARANALOGINTEGRATEDCIRCUIT

CEL

California Eastern Labs

UPC2745TB

BIPOLARANALOGINTEGRATEDCIRCUIT

FEATURES •Supplyvoltage:RecommendedVCC=2.7to3.3V CircuitoperationVCC=1.8to3.3V •Upperlimitoperatingfrequency:μPC2745TB;fu=2.7GHzTYP.@3dBbandwidth μPC2746TB;fu=1.5GHzTYP.@3dBbandwidth •Highisolation:μPC2745TB;ISL=38dBTYP.@f=500MHz μPC2746TB;IS

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

UPC2745TB

BIPOLARANALOGINTEGRATEDCIRCUIT

CEL

California Eastern Labs

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