首页 >TLP2703(D4-TP.E)>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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POWERMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellkn | IRF International Rectifier | IRF | ||
MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheμPA2703GRisN-ChannelMOSFieldEffectTransistor designedforDC/DCconvertersandpowermanagement applicationsofnotebookcomputers. FEATURES •Lowon-stateresistance RDS(on)1=4.2mΩMAX.(VGS=10V,ID=9.0A) RDS(on)2=6.4mΩMAX.(VGS=4.5V,ID=9.0A) •Lo | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
P-Channel70V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •High-SideSwitching •LowOn-Resistance:3 •LowThreshold:-2V(typ.) •FastSwtichingSpeed:20ns(typ.) •LowInputCapacitance:20pF(typ.) •ComplianttoRoHSDirective2002/95/EC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
P-Channel70V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
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Thyristors(SiBODBreakoverDevices) [CRYDOM] GetTVSInsuranceFrom ThePeopleWhoKnow There’stoomuchridingonover-voltagesurgeprotectiontotakechances.That’swhymoreandmorepeopleareturningtoCrydom. Crydom’sSiBODSeriesEquals “CrowBar”Protection Toprotectsensitivetelecommunicationscircuitry,CrydomTh | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
Thyristors(SiBODBreakoverDevices) [CRYDOM] GetTVSInsuranceFrom ThePeopleWhoKnow There’stoomuchridingonover-voltagesurgeprotectiontotakechances.That’swhymoreandmorepeopleareturningtoCrydom. Crydom’sSiBODSeriesEquals “CrowBar”Protection Toprotectsensitivetelecommunicationscircuitry,CrydomTh | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 |
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