TLP155E中文资料东芝数据手册PDF规格书

Plasma Display Panel (PDP)

Industrial Inverter

MOS FET / IGBT Gate Driver

The Toshiba TLP155E consists of an infrared emitting diodes and integrated

high gain, high-speed photodetectors. The TLP155E is housed in the SO6

package.

The photodetector has an internal Faraday shield that provides a guaranteed

common-mode transient immunity of ±15 kV/μs. TLP155E is suitable for

gate driving circuit for IGBTs or power MOSFETs.

 Buffer logic type (Totem pole output)

 Package type: SO6

 Peak Output Current : IOP = ±0.6 A (max)

 Guaranteed performance over temperature: -40 to 100 °C

 Threshold Input Current: IFLH = 7.5 mA (max)

 Propagation delay time : tpLH / tpHL = 200 ns (max)

 Common mode transient immunity : ±15 kV/μs (min)

 Isolation voltage : 3750 Vrms (min)

 UL-recognized: UL 1577, File No.E67349

 cUL-recognized: CSA Component Acceptance Service No.5A

File No.E67349

 VDE-approved: EN 60747-5-5, EN 62368-1 (Note 1)

 CQC-approved: GB4943.1, GB8898 Thailand Factory