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APT1002RBN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=7A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

APT1002RCN

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

POWERMOSIV™ N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

ADPOW

Advanced Power Technology

APT1002RCN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=5.5A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

APT1002RDN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=7A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ARJ-1002

GIGABITRJ45LANMAGNETIC

ABRACONAbracon Corporation

阿布雷肯

ASI1002

NPNSILICONRFPOWERTRANSISTOR

DESCRIPTION: TheASI1002isDesignedforGeneralPurposeClassCPowerAmplifierApplicationsupto1500MHz. FEATURES: •PG=12dBminat2W/1,000MHz •HermeticMicrostripPackage •Omnigold™MetalizationSystem

ASI

Advanced Semiconductor, Inc

AT-1002

HighPowerFixedAttenuators(Radiatorbuilt-in)

HighPowerFixedAttenuators(Radiatorbuilt-in) ■Features 1.SmallSizeandEconomical Berylliaisusedforthematerialoftheresistanceelementtoenabletheterminationtobeofsmallsizeandlowcost. 2.ConnectorsUsed Inthecouplingportion,theAT-1000SerieshasanSMAt

HIROSEHirose Electric Company

广濑日本广濑电机株式会社

AU-Y1002-A

CABLE28AWG,UL2725

ASSMANNASSMANN WSW COMPONENTS

ASSMANN WSW组件有限公司

AXHV1002

VCO-VoltageControlledOscillator

AXTALAdvanced XTAL Products

Advanced XTAL Products

B1002ERW

LowCost1x2Inch10WWideInputRangeDC/DCConverters

MPD

MPD (Memory Protection Devices)

B1002R

10W,5VDCInputCompact,DualOutputDC/DCConverters

MPD

MPD (Memory Protection Devices)

B1002RW

Compact1x2Inch10WWideInputRangeDC/DCConverters

MPD

MPD (Memory Protection Devices)

B1002RW

B1000RWSERIES

MPD

MPD (Memory Protection Devices)

BL1002A

COBwithmetalframe5x7dotswithcursor

BOLYMIN

?BOLYMIN INC

BMEXBP1002

rackX80-10slots-RedundantPS-Ethernetbackplane

SCHNEIDERSchneider electric

施耐德施耐德电气

BMEXBP1002H

ruggedizedrackX80-10slots-RedundantPS-Ethernetbackplane

SCHNEIDERSchneider electric

施耐德施耐德电气

BPD1002

BackplanesBPD,BPFforTSeries

bel

Bel Fuse Inc.

BR1002

SILICONBRIDGERECTIFIERS

EIC

EIC

BR1002

SILICONBRIDGERECTIFIERS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

BR1002

BridgeRectifier

10.0ASiliconPassivatedSingle-PhaseBridgeRectifiers-50-1000V Features ●Surgeoverloadrating240amperespeak ●Lowforwardvoltagedrop ●Smallsize;simpleinstallation ●Sliverplatedcopperleads ●Lead-freepartsmeetRoHSrequirments. ●Suffix-HindicatesHalogen-freepart,ex.B

FORMOSAFormosa MS

美丽微半导体美丽微半导体股份有限公司

产品属性

  • 产品编号:

    TLK1002RGER

  • 制造商:

    Texas Instruments

  • 类别:

    集成电路(IC) > 驱动器,接收器,收发器

  • 包装:

    管件

  • 类型:

    收发器

  • 协议:

    千兆位以太网

  • 驱动器/接收器数:

    2/2

  • 电压 - 供电:

    1.7V ~ 1.9V

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    24-VFQFN 裸露焊盘

  • 供应商器件封装:

    24-VQFN(4x4)

  • 描述:

    IC TRANSCEIVER 2/2 24VQFN

供应商型号品牌批号封装库存备注价格
TexasInstruments
18+
ICTXRXSIGNALCONDDUAL24-Q
6800
公司原装现货/欢迎来电咨询!
询价
TexasInstruments
2019+
24-VQFNExposedPad(4x4)
65500
原装正品货到付款,价格优势!
询价
只做原装
21+
QFN-24D
36520
一级代理/放心采购
询价
TI
20+
QFN-24
1001
就找我吧!--邀您体验愉快问购元件!
询价
Texas
21+
NA
10000
原装热卖可订货
询价
Texas Instruments
21+
24-VFQFN
144000
正规渠道/品质保证/原装正品现货
询价
TI
22+
NA
500000
万三科技,秉承原装,购芯无忧
询价
TI
22+
24VQFN
9000
原厂渠道,现货配单
询价
TI
2022+
VQFN64
8835
询价
TI
24+
VQFN64
39500
进口原装现货 支持实单价优
询价
更多TLK1002RGER供应商 更新时间2024-6-18 15:14:00