首页 >TLE4905GNT>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
包装:管件 封装/外壳:TO-243AA 功能:单极开关 类别:传感器,变送器 磁性传感器 - 开关(固态) 描述:MAGNETIC SWITCH UNIPOLAR SOT89-3 | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
AdjustableRFInductors | BournsBourns Electronic Solutions 伯恩斯伯恩斯(邦士) | Bourns | ||
VHBTape-SpecialtyTapes | 3M 3M Electronics | 3M | ||
AdjustableRFInductors | BournsBourns Electronic Solutions 伯恩斯伯恩斯(邦士) | Bourns | ||
AdvancedPlanarTechnologyLowOn-Resistance | IRF International Rectifier | IRF | ||
AdvancedPlanarTechnology | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
AdvancedPlanarTechnologyP-ChannelMOSFET Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | IRF International Rectifier | IRF | ||
AdvancedPlanarTechnology Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
AdvancedPlanarTechnologyP-ChannelMOSFET Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | IRF International Rectifier | IRF | ||
AdvancedPlanarTechnology Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
AdvancedPlanarTechnologyP-ChannelMOSFET Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | IRF International Rectifier | IRF | ||
AdvancedPlanarTechnologyP-ChannelMOSFET Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | IRF International Rectifier | IRF | ||
AdvancedPlanarTechnology | IRF International Rectifier | IRF | ||
TEMPERATURECOMPENSATEDZENERREFERENCEDIODES •TEMPERATURECOMPENSATEDZENERREFERENCEDIODES •LEADLESSPACKAGEFORSURFACEMOUNT •12.8VOLTNOMINALZENERVOLTAGE±5 •LOWNOISE •METALLURGICALLYBONDED •DOUBLEPLUGCONSTRUCTION | CDI-DIODE Compensated Deuices Incorporated | CDI-DIODE | ||
TEMPERATURECOMPENSATEDZENERREFERENCEDIODES •TEMPERATURECOMPENSATEDZENERREFERENCEDIODES •LEADLESSPACKAGEFORSURFACEMOUNT •12.8VOLTNOMINALZENERVOLTAGE±5 •LOWNOISE •METALLURGICALLYBONDED •DOUBLEPLUGCONSTRUCTION | CDI-DIODE Compensated Deuices Incorporated | CDI-DIODE | ||
SURFACEMOUNTCLOCKOSCILLATORS | RALTRONRaltron Electronics Corporation 拉隆 | RALTRON | ||
AllNMOmountantennaslistedinthiscatalogsectionrequiretheNMOHF-style | pulse Pulse A Technitrol Company | pulse | ||
AdvancedProcessTechnology | IRF International Rectifier | IRF | ||
N-ChandP-ChFastSwitchingMOSFETs Features ⚫AdvancedTrenchMOSTechnology ⚫SuperLowGateCharge ⚫100EASGuaranteed ⚫GreenDeviceAvailable Applications ⚫MobileEquipment ⚫DCMotorControl. | FETEKFETek Technology Corp. 台湾东沅东沅科技股份有限公司 | FETEK | ||
N-ChandP-ChFastSwitchingMOSFETs Description TheFKS4905isthehighperformance complementaryN-chandP-chMOSFETswith highcelldensity,whichprovideexcellent RDSONandgatechargeformostofthe synchronousbuckconverterapplications. TheFKS4905meettheRoHSandGreen Productrequirement100EASguaranteed with | FETEKFETek Technology Corp. 台湾东沅东沅科技股份有限公司 | FETEK |
产品属性
- 产品编号:
TLE4905GNTSA1
- 制造商:
Infineon Technologies
- 类别:
传感器,变送器 > 磁性传感器 - 开关(固态)
- 系列:
TLE
- 包装:
管件
- 功能:
单极开关
- 技术:
霍尔效应
- 极化:
南极
- 感应范围:
18mT 跳闸,5mT 释放
- 测试条件:
25°C
- 电压 - 供电:
4V ~ 18V
- 电流 - 供电(最大值):
5mA
- 电流 - 输出(最大值):
100mA
- 输出类型:
开路集电极
- 特性:
温度补偿
- 工作温度:
-40°C ~ 125°C(TJ)
- 安装类型:
表面贴装型
- 供应商器件封装:
PG-SOT89
- 封装/外壳:
TO-243AA
- 描述:
MAGNETIC SWITCH UNIPOLAR SOT89-3
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
INFINEON |
2019 |
SOT-89-3 |
55000 |
原装进口假一罚十 |
询价 | ||
英飞凌/国际整流器 |
22+ |
NA |
500000 |
万三科技,秉承原装,购芯无忧 |
询价 | ||
Infineon |
22+ |
NA |
2118 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
Infineon |
21+ |
标准封装 |
3500 |
进口原装,订货渠道! |
询价 | ||
Infineon Technologies |
23+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
询价 | ||
INFINEON |
23+ |
NA |
107 |
霍尔效应传感器 |
询价 | ||
INFINEON |
23+ |
SOT-89-3 |
8000 |
只做原装现货 |
询价 | ||
INFINEON/英飞凌 |
21+ |
SOT-89 |
9852 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
INFINEON |
06+ |
SSOP |
16000 |
询价 | |||
Infineon |
13+ |
TO-92 |
151258 |
原装分销 |
询价 |
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