丝印：Q2425；Package：SO；PRECISION VIRTUAL GROUND

2.5-V Virtual Ground for 5-V/GND Analog Systems High Output-Current Capability Sink or Source . . . 20 mA Typ Micropower Operation . . . 170 μA Typ Excellent Regulation Characteristics − Output Regulation −45 μV Typ at IO = 0 to −10 mA +15 μV Typ at IO = 0 to +10 mA − Input Regulation = 1

文件：690.83 Kbytes 页数：25 Pages

TI

德州仪器

PRECISION VIRTUAL GROUND

文件：230.59 Kbytes 页数：16 Pages

TI

德州仪器

N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

文件：447.06 Kbytes 页数：4 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

文件：447.06 Kbytes 页数：4 Pages

SUTEX