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TLE2161BM中文资料Military-grade, single, 36-V, 6.4-MHz, low-offset (0.3 mV) operational amplifier数据手册TI规格书

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厂商型号

TLE2161BM

功能描述

Military-grade, single, 36-V, 6.4-MHz, low-offset (0.3 mV) operational amplifier

制造商

TI Texas Instruments

中文名称

德州仪器 美国德州仪器公司

数据手册

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更新时间

2025-9-22 17:25:00

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TLE2161BM规格书详情

描述 Description

The TLE2161, TLE2161A, and TLE2161B are JFET-input, low-power, precision operational amplifiers manufactured using the Texas Instruments Excalibur process. Decompensated for stability with a minimum closed-loop gain of 5, these devices combine outstanding output drive capability with low power consumption, excellent dc precision, and high gain-bandwidth product. In addition to maintaining the traditional JFET advantages of fast slew rates and low input bias and offset currents, the Excalibur process offers outstanding parametric stability over time and temperature. This results in a device that remains precise even with changes in temperature and over years of use. The D packages are available taped and reeled. Add R suffix to device type (e.g., TLE2161ACDR).A variety of available options includes small-outline packages and chip-carrier versions for high-density system applications. The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from -40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of -55°C to 125°C.

特性 Features

• Excellent Output Drive Capability VO = ± 2.5 V Min at RL = 100 , VCC± = ± 5 V VO = ± 12.5 V Min at RL = 600 , VCC± = ± 15 V
• Decompensated for High Slew Rate and Gain-Bandwidth Product AVD = 0.5 Min Slew Rate = 10 V/us Typ Gain-Bandwidth Product = 6.5 MHz Typ
• High Open-Loop Gain...280 V/mV Typ
• Low Offset Voltage Drift With Time 0.04 uV/Month Typ
• Low Input Bias Current...5 pA Typ
TLE2161, TLE2161A, TLE2161B EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE u POWER OPERATIONAL AMPLIFIERS SLOS049D - NOVEMBER 1989 - REVISED MAY 1996

技术参数

  • 制造商编号

    :TLE2161BM

  • 生产厂家

    :TI

  • Rail-to-rail

    :In to V+

  • GBW (Typ) (MHz)

    :6.4

  • Slew rate (Typ) (V/us)

    :10

  • Vos (offset voltage @ 25 C) (Max) (mV)

    :0.5

  • Iq per channel (Typ) (mA)

    :0.29

  • Vn at 1 kHz (Typ) (nV/rtHz)

    :40

  • Rating

    :Military

  • Operating temperature range (C)

    :-55 to 125

  • Offset drift (Typ) (uV/C)

    :6

  • Features

    :Decompensated

  • Input bias current (Max) (pA)

    :60

  • CMRR (Typ) (dB)

    :90

  • Output current (Typ) (mA)

    :50

  • Architecture

    :FET

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