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TLE2161ACD中文资料德州仪器数据手册PDF规格书

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厂商型号

TLE2161ACD

功能描述

EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS

丝印标识

2161AC

封装外壳

SOIC

文件大小

586.84 Kbytes

页面数量

33

生产厂商

TI

中文名称

德州仪器

网址

网址

数据手册

下载地址一下载地址二到原厂下载

更新时间

2026-2-3 20:00:00

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TLE2161ACD规格书详情

Excellent Output Drive Capability

VO = ± 2.5 V Min at RL = 100 W,

VCC± = ± 5 V

VO = ± 12.5 V Min at RL = 600 W,

VCC± = ± 15 V

Low Supply Current . . . 280 mA Typ

Decompensated for High Slew Rate and

Gain-Bandwidth Product

AVD = 0.5 Min

Slew Rate = 10 V/ms Typ

Gain-Bandwidth Product = 6.5 MHz Typ

Wide Operating Supply Voltage Range

VCC ± = ± 3.5 V to ± 18 V

High Open-Loop Gain . . . 280 V/mV Typ

Low Offset Voltage . . . 500 mV Max

Low Offset Voltage Drift With Time

0.04 mV/Month Typ

Low Input Bias Current . . . 5 pA Typ

description

The TLE2161, TLE2161A, and TLE2161B are

JFET-input, low-power, precision operational

amplifiers manufactured using the Texas

Instruments Excalibur process. Decompensated

for stability with a minimum closed-loop gain of 5,

these devices combine outstanding output drive

capability with low power consumption, excellent

dc precision, and high gain-bandwidth product.

In addition to maintaining the traditional JFET

advantages of fast slew rates and low input bias

and offset currents, the Excalibur process offers

outstanding parametric stability over time and

temperature. This results in a device that remains

precise even with changes in temperature and

over years of use.

产品属性

  • 型号:

    TLE2161ACD

  • 功能描述:

    运算放大器 - 运放 Low Power JFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 通道数量:

    4

  • 共模抑制比(最小值):

    63 dB

  • 输入补偿电压:

    1 mV

  • 输入偏流(最大值):

    10 pA

  • 工作电源电压:

    2.7 V to 5.5 V

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    QFN-16

  • 转换速度:

    0.89 V/us

  • 关闭:

    No

  • 输出电流:

    55 mA

  • 最大工作温度:

    + 125 C

  • 封装:

    Reel

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全新原装、诚信经营、公司现货销售!
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