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TLE2024A中文资料Excalibur 高速低功耗四路精密运算放大器数据手册TI规格书

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厂商型号

TLE2024A

功能描述

Excalibur 高速低功耗四路精密运算放大器

制造商

TI Texas Instruments

中文名称

德州仪器 美国德州仪器公司

数据手册

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更新时间

2025-9-22 22:58:00

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TLE2024A规格书详情

描述 Description

The TLE202x, TLE202xA, and TLE202xB devices are precision, high-speed, low-power operational amplifiers using a new Texas Instruments Excalibur process. These devices combine the best features of the OP21 with highly improved slew rate and unity-gain bandwidth.

The complementary bipolar Excalibur process utilizes isolated vertical pnp transistors that yield dramatic improvement in unity-gain bandwidth and slew rate over similar devices.

The addition of a bias circuit in conjunction with this process results in extremely stable parameters with both time and temperature. This means that a precision device remains a precision device even with changes in temperature and over years of use.

This combination of excellent dc performance with a common-mode input voltage range that includes the negative rail makes these devices the ideal choice for low-level signal conditioning applications in either single-supply or split-supply configurations. In addition, these devices offer phase-reversal protection circuitry that eliminates an unexpected change in output states when one of the inputs goes below the negative supply rail.

A variety of available options includes small-outline and chip-carrier versions for high-density systems applications.

The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from –40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of –55°C to 125°C.

特性 Features

• Supply Current . . . 300 µA Max
• High Unity-Gain Bandwidth . . . 2 MHz Typ
• High Slew Rate . . . 0.45 V/µs Min
• Supply-Current Change Over Military Temp Range . . . 10 µA Typ at VCC ± = ± 15 V
• Specified for Both 5-V Single-Supply and ±15-V Operation
• Phase-Reversal Protection
• High Open-Loop Gain . . . 6.5 V/µV (136 dB) Typ
• Low Offset Voltage . . . 100 µV Max
• Offset Voltage Drift With Time 0.005 µV/mo Typ
• Low Input Bias Current . . . 50 nA Max
• Low Noise Voltage . . . 19 nV/√Hz Typ

技术参数

  • 制造商编号

    :TLE2024A

  • 生产厂家

    :TI

  • Vos (offset voltage @ 25 C) (Max) (mV)

    :0.85

  • GBW (Typ) (MHz)

    :1.7

  • Features

    :—

  • Slew rate (Typ) (V/us)

    :0.5

  • Rail-to-rail

    :In to V-

  • Offset drift (Typ) (uV/C)

    :2

  • Iq per channel (Typ) (mA)

    :0.2

  • Vn at 1 kHz (Typ) (nV/rtHz)

    :17

  • CMRR (Typ) (dB)

    :115

  • Rating

    :Catalog

  • Operating temperature range (C)

    :-40 to 85

  • Input bias current (Max) (pA)

    :70000

  • Output current (Typ) (mA)

    :3

  • Architecture

    :Bipolar

供应商 型号 品牌 批号 封装 库存 备注 价格
TI
2016+
DIP14
2514
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10+
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5000
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24+
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20000
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1119+
SOIC-16
80
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TI
22+
16SOIC
9000
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ROHS .original
SOIC-16
110
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TI
20+
原装
65790
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24+
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71000
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23+
NA
326
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TI/德州仪器
21+
SOIC-16
5000
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