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TLE2021AM数据手册TI中文资料规格书

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厂商型号

TLE2021AM

功能描述

高速低功耗精密单通道运算放大器

制造商

TI Texas Instruments

中文名称

德州仪器 美国德州仪器公司

数据手册

下载地址下载地址二

更新时间

2025-8-8 19:49:00

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TLE2021AM规格书详情

描述 Description

The TLE202x, TLE202xA, and TLE202xB devices are precision, high-speed, low-power operational amplifiers using a new Texas Instruments Excalibur process. These devices combine the best features of the OP21 with highly improved slew rate and unity-gain bandwidth.

The complementary bipolar Excalibur process utilizes isolated vertical pnp transistors that yield dramatic improvement in unity-gain bandwidth and slew rate over similar devices.

The addition of a bias circuit in conjunction with this process results in extremely stable parameters with both time and temperature. This means that a precision device remains a precision device even with changes in temperature and over years of use.

This combination of excellent dc performance with a common-mode input voltage range that includes the negative rail makes these devices the ideal choice for low-level signal conditioning applications in either single-supply or split-supply configurations. In addition, these devices offer phase-reversal protection circuitry that eliminates an unexpected change in output states when one of the inputs goes below the negative supply rail.

A variety of available options includes small-outline and chip-carrier versions for high-density systems applications.

The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from –40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of –55°C to 125°C.

特性 Features

• Supply Current . . . 300 µA Max
• High Unity-Gain Bandwidth . . . 2 MHz Typ
• High Slew Rate . . . 0.45 V/µs Min
• Supply-Current Change Over Military Temp Range . . . 10 µA Typ at VCC ± = ± 15 V
• Specified for Both 5-V Single-Supply and ±15-V Operation
• Phase-Reversal Protection
• High Open-Loop Gain . . . 6.5 V/µV (136 dB) Typ
• Low Offset Voltage . . . 100 µV Max
• Offset Voltage Drift With Time 0.005 µV/mo Typ
• Low Input Bias Current . . . 50 nA Max
• Low Noise Voltage . . . 19 nV/√Hz Typ

技术参数

  • 制造商编号

    :TLE2021AM

  • 生产厂家

    :TI

  • Vos (offset voltage at 25°C) (max) (mV)

    :0.3

  • GBW (typ) (MHz)

    :1.7

  • Slew rate (typ) (V/µs)

    :0.5

  • Rail-to-rail

    :In to V-

  • Offset drift (typ) (µV/°C)

    :2

  • Iq per channel (typ) (mA)

    :0.2

  • Vn at 1 kHz (typ) (nV√Hz)

    :17

  • CMRR (typ) (dB)

    :110

  • Rating

    :Military

  • Operating temperature range (°C)

    :-55 to 125

  • Input bias current (max) (pA)

    :70000

  • Iout (typ) (A)

    :0.003

  • Architecture

    :Bipolar

  • Input common mode headroom (to negative supply) (typ) (V)

    :-0.3

  • Input common mode headroom (to positive supply) (typ) (V)

    :-1

  • Output swing headroom (to negative supply) (typ) (V)

    :0.7

  • Output swing headroom (to positive supply) (typ) (V)

    :-0.7

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