TLC27M4IDR.A中文资料德州仪器数据手册PDF规格书

1FEATURES

2. Trimmed Offset Voltage

. TLC27M9 . . . 900 μV Max at TA = 25°C,

VDD = 5 V

. Input Offset Voltage Drift . . . Typically

0.1 μV/Month, Including the First 30 Days

. Wide Range of Supply Voltages Over Specified

Temperature Range:

. 0°C to 70°C . . . 3 V to 16 V

. .40°C to 85°C . . . 4 V to 16 V

. .55°C to 125°C . . . 4 V to 16 V

. Single-Supply Operation

. Common-Mode Input Voltage Range

Extends Below the Negative Rail (C-Suffix,

I-Suffix Types)

. Low Noise . . . Typically 32 nV/√Hz

at f = 1 kHz

. Low Power . . . Typically 2.1 mW at

TA = 25°C, VDD = 5 V

. Output Voltage Range Includes Negative Rail

. High Input Impedance . . . 1012 Ω Typ

. ESD-Protection Circuitry

. Small-Outline Package Option Also Available

in Tape and Reel

. Designed-In Latch-Up Immunity

DESCRIPTION

The TLC27M4 and TLC27M9 quad operational

amplifiers combine a wide range of input offset

voltage grades with low offset voltage drift, high input

impedance, low noise, and speeds comparable to

that of general-purpose bipolar devices. These

devices use Texas Instruments silicon-gate

LinCMOS™ technology, which provides offset voltage

stability far exceeding the stability available with

conventional metal-gate processes.

The extremely high input impedance, low bias

currents, make these cost-effective devices ideal for

applications that have previously been reserved for

general-purpose bipolar products, but with only a

fraction of the power consumption.