TLC272CDR中文资料德州仪器数据手册PDF规格书

Trimmed Offset Voltage:

TLC277 . . . 500 μV Max at 25°C,

VDD = 5 V

Input Offset Voltage Drift . . . Typically

0.1 μV/Month, Including the First 30 Days

Wide Range of Supply Voltages Over

Specified Temperature Range:

0°C to 70°C . . . 3 V to 16 V

–40°C to 85°C . . . 4 V to 16 V

–55°C to 125°C . . . 4 V to 16 V

Single-Supply Operation

Common-Mode Input Voltage Range

Extends Below the Negative Rail (C-Suffix,

I-Suffix types)

Low Noise . . . Typically 25 nV/√Hz at

f = 1 kHz

Output Voltage Range Includes Negative

Rail

High Input impedance . . . 1012 Ω Typ

ESD-Protection Circuitry

Small-Outline Package Option Also

Available in Tape and Reel

Designed-In Latch-Up Immunity

description

The TLC272 and TLC277 precision dual

operational amplifiers combine a wide range of

input offset voltage grades with low offset voltage

drift, high input impedance, low noise, and speeds

approaching those of general-purpose BiFET

devices.

These devices use Texas Instruments silicongate

LinCMOS. technology, which provides

offset voltage stability far exceeding the stability

available with conventional metal-gate processes.

The extremely high input impedance, low bias

currents, and high slew rates make these costeffective

devices ideal for applications previously

reserved for BiFET and NFET products. Four

offset voltage grades are available (C-suffix and

I-suffix types), ranging from the low-cost TLC272

(10 mV) to the high-precision TLC277 (500 μV).

These advantages, in combination with good

common-mode rejection and supply voltage

rejection, make these devices a good choice for

new state-of-the-art designs as well as for

upgrading existing designs.