TLC2201AM数据手册TI中文资料规格书
TLC2201AM规格书详情
描述 Description
The TLC220x, TLC220xA, TLC220xB, and TLC220xY are precision, low-noise operational amplifiers using Texas Instruments Advanced LinCMOS process. These devices combine the noise performance of the lowest-noise JFET amplifiers with the dc precision available previously only in bipolar amplifiers. The Advanced LinCMOS process uses silicon-gate technology to obtain input offset voltage stability with temperature and time that far exceeds that obtainable using metal-gate technology. In addition, this technology makes possible input impedance levels that meet or exceed levels offered by top-gate JFET and expensive dielectric-isolated devices. The combination of excellent DC and noise performance with a common-mode input voltage range that includes the negative rail makes these devices an ideal choice for high-impedance, low-level signal-conditioning applications in either single-supply or split-supply configurations.
The device inputs and outputs are designed to withstand 100-mA surge currents without sustaining latch-up. In addition, internal ESD-protection circuits prevent functional failures at voltages up to 2000 V as tested under MIL-PRF-38535, Method 3015.2; however, care should be exercised in handling these devices as exposure to ESD may result in degradation of the parametric performance.
The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from 40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of 55°C to 125°C.
The TLC220x, TLC220xA, TLC220xB, and TLC220xY are precision, low-noise operational amplifiers using Texas Instruments Advanced LinCMOS process. These devices combine the noise performance of the lowest-noise JFET amplifiers with the dc precision available previously only in bipolar amplifiers. The Advanced LinCMOS process uses silicon-gate technology to obtain input offset voltage stability with temperature and time that far exceeds that obtainable using metal-gate technology. In addition, this technology makes possible input impedance levels that meet or exceed levels offered by top-gate JFET and expensive dielectric-isolated devices. The combination of excellent DC and noise performance with a common-mode input voltage range that includes the negative rail makes these devices an ideal choice for high-impedance, low-level signal-conditioning applications in either single-supply or split-supply configurations.
The device inputs and outputs are designed to withstand 100-mA surge currents without sustaining latch-up. In addition, internal ESD-protection circuits prevent functional failures at voltages up to 2000 V as tested under MIL-PRF-38535, Method 3015.2; however, care should be exercised in handling these devices as exposure to ESD may result in degradation of the parametric performance.
The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from 40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of 55°C to 125°C.
特性 Features
• B Grade Is 100% Tested for Noise
• 30 nV/Hz Max at f = 10 Hz
• 12 nV/Hz Max at f = 1 kHz
• Low Input Offset Voltage . . . 500 µV Max
• Excellent Offset Voltage Stability With Temperature . . . 0.5 µV/°C Typ
• Rail-to-Rail Output Swing
• Low Input Bias Current
• 1 pA Typ at TA = 25°C
• Common-Mode Input Voltage Range Includes the Negative Rail
• Fully Specified For Both Single-Supply and Split-Supply Operation
Advanced LinCMOS is a trademark of Texas Instruments Incorporated. All other trademarks are the property of their respective owners.
技术参数
- 制造商编号
:TLC2201AM
- 生产厂家
:TI
- Vos (offset voltage @ 25 C) (Max) (mV)
:0.2
- GBW (Typ) (MHz)
:1.8
- Features
:—
- Slew rate (Typ) (V/us)
:2.5
- Rail-to-rail
:In to V-
- Offset drift (Typ) (uV/C)
:0.5
- Iq per channel (Typ) (mA)
:1
- Vn at 1 kHz (Typ) (nV/rtHz)
:8
- CMRR (Typ) (dB)
:110
- Rating
:Automotive
- Operating temperature range (C)
:-55 to 125
- Input bias current (Max) (pA)
:60
- Output current (Typ) (mA)
:4.5
- Architecture
:CMOS
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
TI |
2016+ |
SOP8 |
3624 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
TI |
专业铁帽 |
TO-99 |
67500 |
铁帽原装主营-可开原型号增税票 |
询价 | ||
TI |
24+ |
SOP8 |
20000 |
全新原厂原装,进口正品现货,正规渠道可含税!! |
询价 | ||
TI/德州仪器 |
24+ |
SOIC-8_150mil |
6000 |
全新原装深圳仓库现货有单必成 |
询价 | ||
TLC2201AMFKB |
88 |
88 |
询价 | ||||
TI |
24+ |
SOIC|8 |
70230 |
免费送样原盒原包现货一手渠道联系 |
询价 | ||
TI/BB |
24+ |
CDIP8 |
2000 |
原装现货,可开13%税票 |
询价 | ||
TEXASSEMI |
23+ |
NA |
109 |
专做原装正品,假一罚百! |
询价 | ||
TI/德州仪器 |
22+ |
N/A |
12245 |
现货,原厂原装假一罚十! |
询价 | ||
TI |
SOP8 |
3624 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 |