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BAV170

Low-leakagedoublediode

FEATURES ●PlasticSMDpackage ●Lowleakagecurrent:typ.3pA ●Switchingtime:typ.0.8us ●Continuousreversevoltage:max.75V ●Repetitivepeakreversevoltage:max.85V ●Repetitivepeakforwardcurrent:max.500mA APPLICATIONS ●Low-leakagecurrentapplicationsinsurfacemountedci

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BAV170

SURFACEMOUNT,LOWLEAKAGESWITCHINGDIODES

VOLTAGE100VoltPOWER250mWatt FEATURES •Sufacemountpackageideallysuitedforautomaticinsertion. •Verylowleakagecurrent.2pAtypicalatVR=75V. •Lowcapacitance.2pFmaxatVR=0V,f=1MHz •LeadfreeincompliancewithEURoHS2011/65/EUdirective MECHANICALDATA •Case:SOT-23p

PANJITPANJIT International Inc.

强茂強茂股份有限公司

BAV170

DUALSURFACEMOUNTLOWLEAKAGEDIODE

DIODESDiodes Incorporated

达尔科技

BAV170

Low-leakagedoublediode

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BAV170

DUALSURFACEMOUNTLOWLEAKAGEDIODE

Features •SurfaceMountPackageIdeallySuitedforAutomatedInsertion •VeryLowLeakageCurrent •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101StandardsforHighReliability •PPAPCapable(Note

DIODESDiodes Incorporated

达尔科技

BAV170

SiliconLowLeakageDiodeArray

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

BAV170

DUALSURFACEMOUNTLOWLEAKAGEDIODE

Features •SurfaceMountPackageIdeallySuitedforAutomatedInsertion •VeryLowLeakageCurrent •Lead,HalogenandAntimonyFree,RoHSCompliant GreenDevice(Notes3and4) •QualifiedtoAEC-Q101StandardsforHighReliability

DIODESDiodes Incorporated

达尔科技

BAV170

SiliconLowLeakageDiodeArray

SiliconLowLeakageDiodeArray •Low-leakageapplications •Mediumspeedswitchingtimes •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

BAV170

IntroducingVeryLowLeakageSOT-23Diodes:

Features •SurfaceMountPackageIdeallySuitedforAutomatedInsertion •VeryLowLeakageCurrent •LeadHalogenandAntimonyFree,RoHSCompliantGreenDevice(Notes1and2) •QualifiedtoAEC-Q101StandardsforHighReliability

DIODESDiodes Incorporated

达尔科技

BAV170

SiliconLowLeakageDiodeArray(LowleakageapplicationsMediumspeedswitchingtimesCommoncathode)

●Lowleakageapplications ●Mediumspeedswitchingtimes ●Commoncathode

SIEMENSSiemens Ltd

西门子德国西门子股份公司

BAV170

Low-leakagedoublediode

DESCRIPTION Epitaxial,medium-speedswitching,doublediodeinasmallSOT23plasticSMDpackage.Thediodesareincommoncathodeconfiguration. FEATURES •PlasticSMDpackage •Lowleakagecurrent:typ.3pA •Switchingtime:typ.0.8µs •Continuousreversevoltage:max.75V •Repetitiv

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BAV170

250mWLowLeakageDiode85Volts

Features •SurfaceMountPackageIdeallySuitedforAutomaticInsertion •VeryLowLeakageCurrent •LeadFreeFinish/RohsCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •Halogenfreeavailableuponrequestbyaddingsuffix-HF

MCCMicro Commercial Components

美微科美微科半导体公司

BAV170

Low-leakagedoublediode

Features ●PlasticSMDpackage ●Lowleakagecurrent:typ.3pA ●Switchingtime:typ.0.8s ●Continuousreversevoltage:max.75V ●Repetitivepeakreversevoltage:max.85V ●Repetitivepeakforwardcurrent:max.500mA.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

BAV170

Low-leakageDoubleDiode

FEATURES ●Lowleakagecurrent:typ.3pA ●Switchingtime:typ.0.8µs ●Continuousreversevoltage:max.75V ●Repetitivepeakreversevoltage:max.85V ●Repetitivepeakforwardcurrent:max.500mA.

SECOS

SeCoS Halbleitertechnologie GmbH

BAV170

SURFACEMOUNT,LOWLEAKAGESWITCHINGDIODES

PANJITPANJIT International Inc.

强茂強茂股份有限公司

BAV170

Low-leakagedoublediode

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BAV170

Low-leakageDoubleDiode

Features ◇PlasticSMDpackage ◇Lowleakagecurrent:typ.3pA ◇Switchingtime:typ.0.8ms ◇Continuousreversevoltage:max.75V ◇Repetitivepeakreversevoltage:max.85V ◇Repetitivepeakforwardcurrent:max.500mA. Applications ◇Low-leakagecurrentapplicationsinsurfacemounted

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

BAV170

SOT-23Plastic-EncapsulateDiodes

SwitchingDiodes Features ●LowLeakageCurrent ●HighSwitchingSpeed Applications ●Low-leakageCurrentApplications inSurfaceMountedCircuits

HDSEMIJiangsu High diode Semiconductor Co., Ltd

苏海德半导体苏海德半导体有限公司

BAV170

LowLeakageCurrent

SwitchingDiode FEATURES ●LowLeakageCurrent ●HighSwitchingSpeed APPLICATION ●Low-leakageCurrentApplicationsinSurfaceMountedCircuits

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

BAV170

Low-leakagedoublediode

DSK

Diode Semiconductor Korea

详细参数

  • 型号:

    TL170C

  • 制造商:

    TI

  • 制造商全称:

    Texas Instruments

  • 功能描述:

    SILICON HALL-EFFECT SWITCH

供应商型号品牌批号封装库存备注价格
TI
05+
原厂原装
4456
只做全新原装真实现货供应
询价
TL
8410+
TO-92
1000
现货库存
询价
TL
8410+
TO-92
1000
原装现货 实单可谈
询价
TL
21+
TO92
27500
原厂VIP渠道,亚太地区一级代理商,可提供更多数量!
询价
TI
23+
NA
100
磁性传感器
询价
TI(德州仪器)
23+
8215
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
TI/德州仪器
23+
-
8355
只做原装现货/实单可谈/支持含税拆样
询价
Texas Instruments(德州仪器)
24+
-
690000
代理渠道/支持实单/只做原装
询价
23+
N/A
58300
一级代理放心采购
询价
23+
589610
新到现货 原厂一手货源 价格秒杀代理!
询价
更多TL170C供应商 更新时间2024-6-6 15:26:00