丝印：K5A90E；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance : RDS(ON) = 2.5 Ω (typ.) (2) Low leakage current : IDSS = 10 μA (max) (VDS = 720 V) (3) Enhancement mode : Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.45 mA)

文件：393.58 Kbytes 页数：9 Pages

TOSHIBA

东芝

Power MOSFET (N-ch 700V VDSS)

Application Scope：Switching regulators\nPolarity：N-ch\nGeneration：π-MOSⅧ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国 Drain current ID 4.5 A \nPower Dissipation PD 40 W \nDrain-Source voltage VDSS 900 V ;

Toshiba

东芝

SCHOTTKY BARRIER TYPE DIODE (SWITCHING TYPE POWER SUPPLY, CONVERTER & CHOPPER)

SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. FEATURES • Average Output Rectified Current : IO=5A (Tc=115ᴱ ). • Repetitive Peak Reverse Voltage : VRRM=90V. • Fast Reverse Recovery Time : trr=35ns. • Low Peak Forward Voltage : 0.70V(Typ.)

文件：72.97 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)

TO220F

TOSHIBA/东芝

上传：深圳市东来宝电子科技有限公司

TO-220F

TOSHIBA/东芝

上传：深圳庞田科技有限公司