丝印：K560A65Y；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.43 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.24mA)

文件：450.22 Kbytes 页数：10 Pages

TOSHIBA

东芝

Isc N-Channel MOSFET Transistor

文件：342.24 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET (N-ch 500V VDSS 700V)

Application Scope：Switching regulators\nPolarity：N-ch\nGeneration：DTMOSⅤ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国 Drain current ID 7.0 A \nPower Dissipation PD 30 W \nDrain-Source voltage VDSS 650 V ;

Toshiba

东芝

Isc N-Channel MOSFET Transistor

文件：342.24 Kbytes 页数：2 Pages

ISC

无锡固电