Switching Voltage Regulators

文件：238.06 Kbytes 页数：9 Pages

TOSHIBA

东芝

iscN-Channel MOSFET Transistor

文件：325.87 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET (N-ch 250V VDSS 500V)

Polarity：N-ch\nGeneration：π-MOSⅦ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Drain current ID 50 A \nPower Dissipation PD 410 W \nDrain-Source voltage VDSS 300 V \nGate-Source voltage VGSS +/-20 V ;

Toshiba

东芝

5000 W TVS in SMC

Features • Peak pulse power: – 5000 W (10/1000 μs) – up to 48 kW (8/20 μs) • Stand-off voltage range from 5 V to 100 V • Unidirectional type • Low leakage current: 0.2 μA at 25 °C • Operating Tj max: 175 °C • JEDEC registered package outline • Resin meets UL94, V0 • Lead finishing: matte

文件：484.31 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体