isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 3.7A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =2.0Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

Power MOSFET (N-ch 500V VDSS 700V)

Polarity：N-ch\nGeneration：π-MOSⅦ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：马来西亚 Drain current ID 4 A \nPower Dissipation PD 35 W \nDrain-Source voltage VDSS 600 V \nGate-Source voltage VGSS +/-30 V ;

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Power MOSFET (N-ch 500V VDSS 700V)

Application Scope：Switching regulators\nPolarity：N-ch\nGeneration：π-MOSⅦ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：马来西亚 Drain current ID 3.5 A \nPower Dissipation PD 35 W \nDrain-Source voltage VDSS 600 V ;

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东芝

Power MOSFET (N-ch 500V VDSS 700V)

Polarity：N-ch\nGeneration：π-MOSⅦ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国 / 马来西亚 Drain current ID 3.7 A \nPower Dissipation PD 35 W \nDrain-Source voltage VDSS 600 V \nGate-Source voltage VGSS +/-30 V ;

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东芝