丝印：K430A60F；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Easy to control Gate switching (2) Low drain-source on-resistance: RDS(ON) = 0.36 Ω (typ.) (3) Enhancement mode: Vth = 2 to 4 V (VDS = 10 V, ID = 1.75 mA)

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TOSHIBA

东芝

Power MOSFET (N-ch 500V

Application Scope：Switching Voltage Regulators\nPolarity：N-ch\nGeneration：π-MOSⅨ\nInternal Connection：Single\nRoHS Compatible Product(s) (#)：Please contact us. Drain-Source voltage VDSS 600 V \nGate-Source voltage VGSS +/-30 V \nDrain current ID 13 A \nPower Dissipation PD 45 W ;

Toshiba

东芝

TO-247

TOSHIBA/东芝

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TO-220F

TOSHIBA

东芝

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DIP-7

TAKION

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