Power MOSFET (N-ch 150V VDSS 250V)

Polarity：N-ch\nGeneration：π-MOSⅦ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Drain current ID 40 A \nPower Dissipation PD 260 W \nDrain-Source voltage VDSS 200 V \nGate-Source voltage VGSS +/-20 V ;

Toshiba

东芝

Switching Voltage Regulators

文件：242.59 Kbytes 页数：9 Pages

TOSHIBA

东芝

POWER MODULES DIODE

Description The B40J../B40C../B40D.. series of B-modules use power diodes in half0bridge configuration. The semiconductors are electrically isolated from the metal base allowing common heatsink and compact assemblies to be built. They can be interconnected to form single or three phase bridges.

文件：340.58 Kbytes 页数：6 Pages

IRF

TO-247

TOSHIBA/东芝

上传：深圳庞田科技有限公司

TO-220F

TOSHIBA

东芝

上传：深圳市振宏微科技有限公司