Isc N-Channel MOSFET Transistor

• DESCRITION • Switching Voltage Regulators • FEATURES • Low drain-source on-resistance: RDS(ON) =10.4mΩ (VGS = 10 V) • Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.3mA) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable ope

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ISC

无锡固电

N-Channel MOSFET uses advanced trench technology

文件：1.55463 Mbytes 页数：5 Pages

DOINGTER

杜因特

Power MOSFET (N-ch single 30V VDSS 60V)

Application Scope：Switching regulators\nPolarity：N-ch\nGeneration：U-MOSⅧ-H\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国 Drain current ID 60 A \nPower Dissipation PD 67 W \nDrain-Source voltage VDSS 60 V \nGate-Source voltage VGSS +/-20 V ;

Toshiba

东芝

TOSHIBA/东芝
TO-247

TOSHIBA/东芝

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TOSHIBA
TO-220F

TOSHIBA

东芝

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